@article{liao_samara-rubio_liu_rubin_keil_franck_hodge_paniccia_2006, title={High speed metal-oxide-semiconductor capacitor-based silicon optical modulators}, volume={45}, number={8B}, journal={Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers}, author={Liao, L. and Samara-Rubio, D. and Liu, A. S. and Rubin, D. and Keil, U. D. and Franck, T. and Hodge, D. and Paniccia, M.}, year={2006}, pages={6603–6608} }
 @article{wang_parker_hodge_croswell_yang_misra_hauser_2000, title={Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks}, volume={21}, ISSN={["0741-3106"]}, DOI={10.1109/55.830971}, abstractNote={In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET's depends on the Fermi level position in the gate material. In addition, a fixed positive charge at the oxide-nitride interface was observed.}, number={4}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Wang, ZG and Parker, CG and Hodge, DW and Croswell, RT and Yang, N and Misra, V and Hauser, JR}, year={2000}, month={Apr}, pages={170–172} }