Chris G. Parker

Wang, Z. G., Parker, C. G., Hodge, D. W., Croswell, R. T., Yang, N., Misra, V., & Hauser, JR. (2000). Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks. IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172. https://doi.org/10.1109/55.830971

Srivastava, A., Heinisch, H. H., Vogel, E., Parker, C., Osburn, C. M., Masnari, N. A., … Hauser, JR. (1998). Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs. RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170. https://doi.org/10.1557/proc-525-163

Parker, C. G., Lucovsky, G., & Hauser, JR. (1998). Ultrathin oxide-nitride gate dielectric MOSFET's. IEEE ELECTRON DEVICE LETTERS, 19(4), 106–108. https://doi.org/10.1109/55.663529