Works (4)

Updated: July 5th, 2023 16:01

2002 journal article

Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1989–1996.

By: A. Khandelwal n, H. Niimi n, G. Lucovsky n & H. Lamb n

co-author countries: United States of America đŸ‡ºđŸ‡¸
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

JOURNAL OF APPLIED PHYSICS, 91(1), 48–55.

By: H. Niimi n, A. Khandelwal n, H. Lamb n & G. Lucovsky n

co-author countries: United States of America đŸ‡ºđŸ‡¸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Nitrogen incorporation in ultrathin gate dielectrics: A comparison of He/N2O and He/N-2 remote plasma processes

JOURNAL OF APPLIED PHYSICS, 90(6), 3100–3108.

By: A. Khandelwal n, B. Smith  n & H. Lamb n

co-author countries: United States of America đŸ‡ºđŸ‡¸
Source: Web Of Science
Added: August 6, 2018

2000 article

Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 1757–1763.

By: B. Smith  n, A. Khandelwal n & H. Lamb n

co-author countries: United States of America đŸ‡ºđŸ‡¸
Source: Web Of Science
Added: August 6, 2018

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