2002 journal article
Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1989–1996.
By: A. Khandelwal n, H. Niimi n, G. Lucovsky n & H. Lamb n
Reaction pathways in remote plasma nitridation of ultrathin SiO2 films
JOURNAL OF APPLIED PHYSICS, 91(1), 48–55.
By: H. Niimi n, A. Khandelwal n, H. Lamb n & G. Lucovsky n
2001 journal article
Nitrogen incorporation in ultrathin gate dielectrics: A comparison of He/N2O and He/N-2 remote plasma processes
JOURNAL OF APPLIED PHYSICS, 90(6), 3100–3108.
By: A. Khandelwal n, B. Smith n & H. Lamb n
Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 1757–1763.
By: B. Smith n, A. Khandelwal n & H. Lamb n
Open access is the free, immediate, online availability of research
articles. Making your research open access allows researchers across
to globe read and interact with your work which may increase citations
to your work.
For more information on open access and how you can increase your research impact, contact
the Copyright & Digital Scholarship Center (CDSC)