Works (14)

Updated: July 5th, 2023 16:01

2002 article

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805.

By: R. Johnson*, J. Hong*, C. Hinkle* & G. Lucovsky*

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

By: R. Johnson, J. Hong, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2002, May 8). APPLIED SURFACE SCIENCE, Vol. 190, pp. 43–47.

By: R. Johnson n, G. Lucovsky n & J. Hong n

co-author countries: United States of America 🇺🇸
author keywords: heterovalent interface; interface traps; fixed charge; trapped limited transport; Poole-Frenkel transport
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

By: M. Ulrich, R. Johnson, J. Hong, J. Rowe, G. Lucovsky, J. Quinton, T. Madey

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050.

By: B. Choi*, D. Fleetwood*, R. Schrimpf*, L. Massengill*, K. Galloway*, M. Shaneyfelt*, T. Meisenheimer, P. Dodd* ...

co-author countries: United States of America 🇺🇸
author keywords: heavy-ion irradiation; radiation effect; single-event effect; ultra-thin gate dielectric films
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

Electronics Letters, 38(4), 157–158.

By: B. Choi*, D. Fleetwood*, L. Massengill*, R. Schrimpf*, K. Galloway*, M. Shaneyfelt*, T. Meisenheimer*, P. Dodd* ...

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2002 article

Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1699–1705.

By: J. Wang n, G. Powell n, R. Johnson n, G. Lucovsky n & D. Aspnes n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

APPLIED PHYSICS LETTERS, 79(7), 973–975.

By: H. Lazar n, V. Misra n, R. Johnson n & G. Lucovsky n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 article

Chemical and physical limits on the performance of metal silicate high-k gate dielectrics

Lucovsky, G., Rayner, G. B., & Johnson, R. S. (2001, July). MICROELECTRONICS RELIABILITY, Vol. 41, pp. 937–945.

By: G. Lucovsky n, G. Rayner n & R. Johnson n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

By: R. Johnson, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

APPLIED PHYSICS LETTERS, 79(12), 1775–1777.

By: G. Lucovsky n, G. Rayner n, D. Kang n, G. Appel n, R. Johnson n, Y. Zhang n, D. Sayers n, H. Ade n, J. Whitten n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 article

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2001, November). MICROELECTRONIC ENGINEERING, Vol. 59, pp. 385–391.

By: R. Johnson n, G. Lucovsky n & J. Hong n

co-author countries: United States of America 🇺🇸
author keywords: heterovalent interface; interface traps; fixed charge; trapped limited transport
Source: Web Of Science
Added: August 6, 2018

2001 article

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 19, pp. 1353–1360.

By: R. Johnson n, G. Lucovsky n & I. Baumvol*

co-author countries: Brazil 🇧🇷 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 article

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233.

By: R. Johnson n, H. Niimi n & G. Lucovsky n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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