Works (14)
Updated: July 5th, 2023 16:01
2002 article
Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices
Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.
Source: NC State University Libraries
Added: August 6, 2018
2002 article
Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys
Johnson, R. S., Lucovsky, G., & Hong, J. G. (2002, May 8). APPLIED SURFACE SCIENCE, Vol. 190, pp. 43–47.
author keywords: heterovalent interface; interface traps; fixed charge; trapped limited transport; Poole-Frenkel transport
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.
Source: NC State University Libraries
Added: August 6, 2018
2002 article
Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation
Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050.
author keywords: heavy-ion irradiation; radiation effect; single-event effect; ultra-thin gate dielectric films
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation
Electronics Letters, 38(4), 157–158.
Source: NC State University Libraries
Added: August 6, 2018
2002 article
Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1699–1705.
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(Web of Science)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2001 journal article
Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices
APPLIED PHYSICS LETTERS, 79(7), 973–975.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2001 article
Chemical and physical limits on the performance of metal silicate high-k gate dielectrics
Lucovsky, G., Rayner, G. B., & Johnson, R. S. (2001, July). MICROELECTRONICS RELIABILITY, Vol. 41, pp. 937–945.
TL;DR:
The paper includes results for other high- k oxides, Al 2 O 3 and Ta 2 O 5, and their alloys that relate to the issues addressed in this paper, and in particular help to put the results on the silicate alloys into a better perspective.
(via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.
Source: NC State University Libraries
Added: August 6, 2018
2001 journal article
Electronic structure of noncrystalline transition metal silicate and aluminate alloys
APPLIED PHYSICS LETTERS, 79(12), 1775–1777.
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2001 article
Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys
Johnson, R. S., Lucovsky, G., & Hong, J. G. (2001, November). MICROELECTRONIC ENGINEERING, Vol. 59, pp. 385–391.
author keywords: heterovalent interface; interface traps; fixed charge; trapped limited transport
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2001 article
Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 19, pp. 1353–1360.
Source: Web Of Science
Added: August 6, 2018
2000 article
New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233.
Source: Web Of Science
Added: August 6, 2018
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