Works (14)

2002 journal article

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Solid-State Electronics, 46(11), 1799–1805.

By: R. Johnson, J. Hong, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

By: R. Johnson, J. Hong, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Applied Surface Science, 190(1-4), 43–47.

By: R. Johnson, G. Lucovsky & J. Hong

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

By: M. Ulrich, R. Johnson, J. Hong, J. Rowe, G. Lucovsky, J. Quinton, T. Madey

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

IEEE Transactions on Nuclear Science, 49(6), 3045–3050.

By: B. Choi, D. Fleetwood, R. Schrimpf, L. Massengill, K. Galloway, M. Shaneyfelt, T. Meisenheimer, P. Dodd ...

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

Electronics Letters, 38(4), 157–158.

By: B. Choi, D. Fleetwood, L. Massengill, R. Schrimpf, K. Galloway, M. Shaneyfelt, T. Meisenheimer, P. Dodd ...

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1699–1705.

By: J. Wang, G. Powell, R. Johnson, G. Lucovsky & D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

Applied Physics Letters, 79(7), 973–975.

By: H. Lazar, V. Misra, R. Johnson & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Chemical and physical limits on the performance of metal silicate high-k gate dielectrics

Microelectronics Reliability, 41(7), 937–945.

By: G. Lucovsky, G. Rayner & R. Johnson

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

By: R. Johnson, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

Applied Physics Letters, 79(12), 1775–1777.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Microelectronic Engineering, 59(1-4), 385–391.

By: R. Johnson, G. Lucovsky & J. Hong

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 19(4), 1353–1360.

By: R. Johnson, G. Lucovsky & I. Baumvol

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(4), 1230–1233.

By: R. Johnson, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018