Robert Shawn Johnson

Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, October 21). Solid-State Electronics.

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2002, May 1). Applied Surface Science.

Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December 1). IEEE Transactions on Nuclear Science.

Reliability degradation of ultra-thin oxynitride and Al ₂ O ₃ gate dielectric films owing to heavy-ion irradiation

Choi, B. K., Fleetwood, D. M., Massengill, L. W., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, February 14). Electronics Letters.

Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

Wang, J.-F. T., Powell, G. D., Johnson, R. S., Lucovsky, G., & Aspnes, D. E. (2002, July 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, Vol. 20, pp. 1699–1705.

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices

Lazar, H. R., Misra, V., Johnson, R. S., & Lucovsky, G. (2001, August 13). Applied Physics Letters, Vol. 79, pp. 973–975.

Chemical and physical limits on the performance of metal silicate high-k gate dielectrics

Lucovsky, G., Rayner, G. B., & Johnson, R. S. (2001, July 1). Microelectronics Reliability.

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Appel, G., Johnson, R. S., Zhang, Y., … Whitten, J. L. (2001, September 17). Applied Physics Letters, Vol. 79, pp. 1775–1777.

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2001, November 1). Microelectronic Engineering.

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

Johnson, R. S., Lucovsky, G., & Baumvol, I. (2001, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

Johnson, R. S., Niimi, H., & Lucovsky, G. (2000, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.