Robert Shawn Johnson

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices. SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805. https://doi.org/10.1016/S0038-1101(02)00152-1

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002). Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2002, May 8). Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys. APPLIED SURFACE SCIENCE, Vol. 190, pp. 43–47. https://doi.org/10.1016/S0169-4332(01)00889-3

Ulrich, M. D., Johnson, R. S., Hong, J. G., Rowe, J. E., Lucovsky, G., Quinton, J. S., & Madey, T. E. (2002). Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050. https://doi.org/10.1109/TNS.2002.805389

Choi, B. K., Fleetwood, D. M., Massengill, L. W., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002). Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation. Electronics Letters, 38(4), 157–158. https://doi.org/10.1049/el:20020119

Wang, J. F. T., Powell, G. D., Johnson, R. S., Lucovsky, G., & Aspnes, D. E. (2002). Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1699–1705. https://doi.org/10.1116/1.1493783

Lazar, H. R., Misra, V., Johnson, R. S., & Lucovsky, G. (2001). Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS, 79(7), 973–975. https://doi.org/10.1063/1.1392973

Lucovsky, G., Rayner, G. B., & Johnson, R. S. (2001, July). Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. MICROELECTRONICS RELIABILITY, Vol. 41, pp. 937–945. https://doi.org/10.1016/S0026-2714(01)00046-4

Johnson, R. S., Hong, J. G., & Lucovsky, G. (2001). Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

Lucovsky, G., Rayner, G. B., Kang, D., Appel, G., Johnson, R. S., Zhang, Y., … Whitten, J. L. (2001). Electronic structure of noncrystalline transition metal silicate and aluminate alloys. APPLIED PHYSICS LETTERS, 79(12), 1775–1777. https://doi.org/10.1063/1.1404997

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2001, November). Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys. MICROELECTRONIC ENGINEERING, Vol. 59, pp. 385–391. https://doi.org/10.1016/S0167-9317(01)00673-6

Johnson, R. S., Lucovsky, G., & Baumvol, I. (2001). Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 19, pp. 1353–1360. https://doi.org/10.1116/1.1379316

Johnson, R. S., Niimi, H., & Lucovsky, G. (2000). New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233. https://doi.org/10.1116/1.582331