Works (35)

2004 journal article

Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions

Journal of Physics. Condensed Matter, 16(17), S1815–1837.

By: G. Lucovsky & H. Niimi

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 20(6), 1989–1996.

By: A. Khandelwal, H. Niimi, G. Lucovsky & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

Journal of Applied Physics, 91(1), 48–55.

By: H. Niimi, A. Khandelwal, H. Lamb & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces

Applied Surface Science, 166(1-4), 485–491.

By: H. Niimi, H. Yang, G. Lucovsky, J. Keister & J. Rowe

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

By: L. Brillson, A. Young, B. White, J. Schafer, H. Niimi, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Applied Surface Science, 159(2000 June), 50–61.

By: G. Lucovsky, H. Niimi, Y. Wu & H. Yang

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748.

By: G. Lucovsky, H. Yang, H. Niimi, J. Keister, J. Rowe, M. Thorpe, J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

By: G. Lucovsky, H. Yang, H. Niimi, M. Thorpe & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(4), 1230–1233.

By: R. Johnson, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics

Thin Solid Films, 374(2), 217–227.

By: G. Lucovsky, H. Yang, Y. Wu & H. Niimi

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(4), 1163–1168.

By: G. Lucovsky, Y. Wu, H. Niimi, H. Yang, J. Keister & J. Rowe

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

IEEE Electron Device Letters, 21(2), 76–78.

By: H. Yang, H. Niimi, J. Keister & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835.

By: J. Keister, J. Rowe, J. Kolodziej, H. Niimi, T. Madey & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Applied Physics Letters, 74(14), 2005–2007.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1258–1262.

By: A. Young, R. Bandhu, J. Schafer, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Microelectronic Engineering, 48(1-4), 303–306.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

By: V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(6), 3185–3196.

By: H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621.

By: H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1250–1257.

By: J. Keister, J. Rowe, J. Kolodziej, H. Niimi, H. Tao, T. Madey, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.

By: Y. Wu, H. Niimi, H. Yang, G. Lucovsky & R. Fair

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Microelectronic Engineering, 48(1-4), 307–310.

By: H. Yang, H. Niimi, Y. Wu, G. Lucovsky, J. Keister & J. Rowe

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2177–2181.

By: A. Young, J. Schafer, G. Jessen, R. Bandhu, L. Brillson, G. Lucovsky, H. Niimi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 37(2), 709–714.

By: K. Koh, H. Niimi, G. Lucovsky & M. Green

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon

Applied Physics Letters, 73(6), 791–793.

By: J. Schafer, A. Young, L. Brillson, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Differences between silicon oxycarbide regions at SiC-SiO2 prepared by plasma-assisted oxidation and thermal oxidations

Applied Surface Science, 123(1998 Jan.), 435–439.

By: G. Lucovsky, H. Niimi, A. Golz & H. Kurz

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Monolayer nitrogen atom incorporation at buried Si SiO2 interfaces: preparation by remote plasma oxidation/nitridation and characterization by on line auger electron spectroscopy

Surface Review and Letters, 5(1), 167–173.

By: G. Lucovsky, H. Niimi, K. Koh & M. Green

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 pt.2), 1721–1729.

By: G. Lucovsky, H. Niimi, Y. Wu, C. Parker & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

Surface & Coatings Technology, 98(1-3), 1524–1528.

By: K. Koh, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Journal of Applied Physics, 83(4), 2327–2337.

By: H. Yang, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Surface & Coatings Technology, 98(1-3), 1529–1533.

By: H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Elimination of suboxide transition regions at Si-SiO(2) interfaces by rapid thermal annealing at 900 degrees C

Applied Surface Science, 117(1997 June), 202–206.

By: G. Lucovsky, A. Banerjee, H. Niimi, K. Koh, B. Hinds, C. Meyer, G. Lupke, H. Kurz

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.

By: A. Golz, G. Lucovsky, K. Koh, D. Wolfe, H. Niimi & H. Kurz

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 364–368.

By: H. Niimi, K. Koh & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018