Hiroaki Niimi

Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions

[Review of ]. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(17), S1815–S1837.

Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1989–1996.

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

JOURNAL OF APPLIED PHYSICS, 91(1), 48–55.

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces

Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 485–491.

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. (2000, June). APPLIED SURFACE SCIENCE, Vol. 159, pp. 50–61.

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748.

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233.

Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics

Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). THIN SOLID FILMS, Vol. 374, pp. 217–227.

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168.

The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

IEEE ELECTRON DEVICE LETTERS, 21(2), 76–78.

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835.

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

APPLIED PHYSICS LETTERS, 74(14), 2005–2007.

Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 1258–1262.

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306.

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

Monolayer-level controlled incorporation of nitrogen at Si-SiO(2) interfaces using remote plasma processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 17(6), 3185–3196.

Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621.

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1250–1257.

Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 307–310.

Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2177–2181.

Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714.

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon

APPLIED PHYSICS LETTERS, 73(6), 791–793.

Differences between silicon oxycarbide regions at SiC-SiO(2) prepared by plasma-assisted oxidation and thermal oxidations

Lucovsky, G., Niimi, H., Golz, A., & Kurz, H. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 435–439.

Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy

Lucovsky, G., Niimi, H., Koh, K., & Green, M. L. (1998, February). SURFACE REVIEW AND LETTERS, Vol. 5, pp. 167–173.

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729.

Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

Koh, K., Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528.

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

JOURNAL OF APPLIED PHYSICS, 83(4), 2327–2337.

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1529–1533.

Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C

Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., … Kurz, H. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 202–206.

Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.

Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

Niimi, H., Koh, K., & Lucovsky, G. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 364–368.