Works (35)

Updated: July 5th, 2023 16:04

2004 review

Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions

[Review of ]. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(17), S1815–S1837.

By: G. Lucovsky n & H. Niimi*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1989–1996.

By: A. Khandelwal n, H. Niimi n, G. Lucovsky n & H. Lamb n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

JOURNAL OF APPLIED PHYSICS, 91(1), 48–55.

By: H. Niimi n, A. Khandelwal n, H. Lamb n & G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 article

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces

Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 485–491.

By: H. Niimi n, H. Yang n, G. Lucovsky n, J. Keister n & J. Rowe n

author keywords: gate dielectrics; direct tunneling; interfacial suboxide bonding; nitrided interfaces; Fowler-Nordheim tunneling
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

By: L. Brillson, A. Young, B. White, J. Schafer, H. Niimi, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. (2000, June). APPLIED SURFACE SCIENCE, Vol. 159, pp. 50–61.

By: G. Lucovsky n, H. Niimi n, Y. Wu n & H. Yang n

author keywords: dielectric-semiconductor interfaces; nitrided Si interfaces; tunneling current; NMOS and PMOS FETs; stacked gate dielectrics; high-k gate dielectrics
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748.

By: G. Lucovsky, H. Yang, H. Niimi, J. Keister, J. Rowe, M. Thorpe, J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

By: G. Lucovsky, H. Yang, H. Niimi, M. Thorpe & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 article

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233.

By: R. Johnson n, H. Niimi n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2000 article

Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics

Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). THIN SOLID FILMS, Vol. 374, pp. 217–227.

By: G. Lucovsky n, H. Yang n, Y. Wu n & H. Niimi n

author keywords: stacked gate dielectrics; semiconductor dielectric interfaces; silicon oxynitride alloys; transition metal oxides; CMOS devices; plasma-assisted oxidation; nitridation and deposition
Source: Web Of Science
Added: August 6, 2018

2000 article

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168.

By: G. Lucovsky n, Y. Wu n, H. Niimi n, H. Yang n, J. Keister n & J. Rowe n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

IEEE ELECTRON DEVICE LETTERS, 21(2), 76–78.

By: H. Yang n, H. Niimi, J. Keister n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835.

By: J. Keister, J. Rowe, J. Kolodziej, H. Niimi, T. Madey & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

APPLIED PHYSICS LETTERS, 74(14), 2005–2007.

By: G. Lucovsky n, Y. Wu n, H. Niimi n, V. Misra n & J. Phillips

Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 article

Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 1258–1262.

By: A. Young*, R. Bandhu*, J. Schafer*, H. Niimi n & G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306.

By: R. Therrien n, H. Niimi n, T. Gehrke n, G. Lucovsky n & R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

By: V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Monolayer-level controlled incorporation of nitrogen at Si-SiO(2) interfaces using remote plasma processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 17(6), 3185–3196.

By: H. Niimi n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621.

By: H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1250–1257.

By: J. Keister n, J. Rowe n, J. Kolodziej*, H. Niimi n, H. Tao*, T. Madey*, G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.

By: Y. Wu, H. Niimi, H. Yang, G. Lucovsky & R. Fair

Source: NC State University Libraries
Added: August 6, 2018

1999 article

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 307–310.

By: H. Yang n, H. Niimi n, Y. Wu n, G. Lucovsky n, J. Keister n & J. Rowe n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2177–2181.

By: A. Young, J. Schafer, G. Jessen, R. Bandhu, L. Brillson, G. Lucovsky, H. Niimi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714.

By: K. Koh n, H. Niimi n, G. Lucovsky n & M. Green

author keywords: low-temperature processing; plasma-assisted oxidation and nitridation; rapid thermal annealing; Si-SiO2 interfaces; Auger electron spectroscopy; optical second harmonic generation; chemical reaction pathways
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon

APPLIED PHYSICS LETTERS, 73(6), 791–793.

By: J. Schafer*, A. Young*, L. Brillson*, H. Niimi n & G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Differences between silicon oxycarbide regions at SiC-SiO(2) prepared by plasma-assisted oxidation and thermal oxidations

Lucovsky, G., Niimi, H., Golz, A., & Kurz, H. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 435–439.

By: G. Lucovsky n, H. Niimi n, A. Golz* & H. Kurz*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1998 article

Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy

Lucovsky, G., Niimi, H., Koh, K., & Green, M. L. (1998, February). SURFACE REVIEW AND LETTERS, Vol. 5, pp. 167–173.

By: G. Lucovsky n, H. Niimi n, K. Koh n & M. Green

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729.

By: G. Lucovsky n, H. Niimi n, Y. Wu n, C. Parker n & . Hauser n

Source: Web Of Science
Added: August 6, 2018

1998 article

Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

Koh, K., Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528.

By: K. Koh n, H. Niimi n & G. Lucovsky n

author keywords: Si-SiO2 interfaces; N-atoms; N2O; Auger electron spectroscopy
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

JOURNAL OF APPLIED PHYSICS, 83(4), 2327–2337.

By: H. Yang n, H. Niimi n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1998 article

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1529–1533.

By: H. Niimi n & G. Lucovsky n

author keywords: N-atom; Si-SiO2 interfaces; plasma-assisted oxidation
Source: Web Of Science
Added: August 6, 2018

1997 article

Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C

Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., … Kurz, H. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 202–206.

By: G. Lucovsky n, A. Banerjee n, H. Niimi n, K. Koh n, B. Hinds n, C. Meyer*, G. Lupke*, H. Kurz*

author keywords: Si-SiO2 interfaces; sub-oxide transition regions; plasma processing; rapid thermal annealing
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.

By: A. Golz, G. Lucovsky, K. Koh, D. Wolfe, H. Niimi & H. Kurz

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

Niimi, H., Koh, K., & Lucovsky, G. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 364–368.

By: H. Niimi*, K. Koh* & G. Lucovsky*

Source: Web Of Science
Added: August 6, 2018

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