Hiroaki Niimi

Lucovsky, G., & Niimi, H. (2004). [Review of Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions]. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(17), S1815–S1837. https://doi.org/10.1088/0953-8984/16/17/018

Khandelwal, A., Niimi, H., Lucovsky, G., & Lamb, H. H. (2002). Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1989–1996. https://doi.org/10.1116/1.1513635

Niimi, H., Khandelwal, A., Lamb, H. H., & Lucovsky, G. (2002). Reaction pathways in remote plasma nitridation of ultrathin SiO2 films. JOURNAL OF APPLIED PHYSICS, 91(1), 48–55. https://doi.org/10.1063/1.1419208

Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (2000, October 9). Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces. APPLIED SURFACE SCIENCE, Vol. 166, pp. 485–491. https://doi.org/10.1016/S0169-4332(00)00480-3

Brillson, L. J., Young, A. P., White, B. D., Schafer, J., Niimi, H., Lee, Y. M., & Lucovsky, G. (2000). Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. (2000, June). Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces. APPLIED SURFACE SCIENCE, Vol. 159, pp. 50–61. https://doi.org/10.1016/S0169-4332(00)00071-4

Lucovsky, G., Yang, H., Niimi, H., Keister, J. W., Rowe, J. E., Thorpe, M. F., & Phillips, J. C. (2000). Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748.

Lucovsky, G., Yang, H., Niimi, H., Thorpe, M. F., & Phillips, J. C. (2000). Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

Johnson, R. S., Niimi, H., & Lucovsky, G. (2000). New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233. https://doi.org/10.1116/1.582331

Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics. THIN SOLID FILMS, Vol. 374, pp. 217–227. https://doi.org/10.1016/S0040-6090(00)01153-6

Lucovsky, G., Wu, Y., Niimi, H., Yang, H., Keister, J., & Rowe, J. E. (2000). Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168. https://doi.org/10.1116/1.582318

Yang, H., Niimi, H., Keister, J. W., & Lucovsky, G. (2000). The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices. IEEE ELECTRON DEVICE LETTERS, 21(2), 76–78. https://doi.org/10.1109/55.821673

Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Madey, T. E., & Lucovsky, G. (1999). Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835.

Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics. APPLIED PHYSICS LETTERS, 74(14), 2005–2007. https://doi.org/10.1063/1.123728

Young, A. P., Bandhu, R., Schafer, J., Niimi, H., & Lucovsky, G. (1999). Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 1258–1262. https://doi.org/10.1116/1.581806

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306. https://doi.org/10.1016/s0167-9317(99)00394-9

Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., … Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen at Si-SiO(2) interfaces using remote plasma processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 17(6), 3185–3196. https://doi.org/10.1116/1.582041

Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621.

Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Tao, H. S., Madey, T. E., & Lucovsky, G. (1999). Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1250–1257. https://doi.org/10.1116/1.581805

Wu, Y., Niimi, H., Yang, H., Lucovsky, G., & Fair, R. B. (1999). Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.

Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (1999, September). The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 307–310. https://doi.org/10.1016/s0167-9317(99)00395-0

Young, A. P., Schafer, J., Jessen, G. H., Bandhu, R., Brillson, L. J., Lucovsky, G., & Niimi, H. (1998). Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2177–2181.

Koh, K., Niimi, H., Lucovsky, G., & Green, M. L. (1998). Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714. https://doi.org/10.1143/JJAP.37.709

Schafer, J., Young, A. P., Brillson, L. J., Niimi, H., & Lucovsky, G. (1998). Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon. APPLIED PHYSICS LETTERS, 73(6), 791–793. https://doi.org/10.1063/1.122003

Lucovsky, G., Niimi, H., Golz, A., & Kurz, H. (1998, January). Differences between silicon oxycarbide regions at SiC-SiO(2) prepared by plasma-assisted oxidation and thermal oxidations. APPLIED SURFACE SCIENCE, Vol. 123, pp. 435–439. https://doi.org/10.1016/S0169-4332(97)00469-8

Lucovsky, G., Niimi, H., Koh, K., & Green, M. L. (1998, February). Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy. SURFACE REVIEW AND LETTERS, Vol. 5, pp. 167–173. https://doi.org/10.1142/S0218625X98000323

Lucovsky, G., Niimi, H., Wu, Y., Parker, C. R., & Hauser, JR. (1998). Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729. https://doi.org/10.1116/1.581291

Koh, K., Niimi, H., & Lucovsky, G. (1998, January). Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O. SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528. https://doi.org/10.1016/S0257-8972(97)00392-7

Yang, H. Y., Niimi, H., & Lucovsky, G. (1998). Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices. JOURNAL OF APPLIED PHYSICS, 83(4), 2327–2337. https://doi.org/10.1063/1.366976

Niimi, H., & Lucovsky, G. (1998, January). Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation. SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1529–1533. https://doi.org/10.1016/S0257-8972(97)00389-7

Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., … Kurz, H. (1997, June). Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C. APPLIED SURFACE SCIENCE, Vol. 117, pp. 202–206. https://doi.org/10.1016/S0169-4332(97)80079-7

Golz, A., Lucovsky, G., Koh, K., Wolfe, D., Niimi, H., & Kurz, H. (1997). Plasma-assisted formation of low defect density SiC-SiO2 interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.

Niimi, H., Koh, K., & Lucovsky, G. (1997, May). Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 364–368. https://doi.org/10.1016/S0168-583X(96)00958-5