2004 journal article

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(1), 175–179.

By: Y. Suh, G. Heuss & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Effect of the composition on the electrical properties of TaSixNy metal gate electrodes

IEEE Electron Device Letters, 24(7), 439–441.

By: Y. Suh, G. Heuss, J. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2

Journal of the Electrochemical Society, 150(5), F79–82.

By: Y. Suh, G. Heuss, V. Misra, D. Park & K. Limb

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis

Applied Physics Letters, 80(8), 1403–1405.

By: Y. Suh, G. Heuss & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

Applied Physics Letters, 78(8), 1134–1136.

By: H. Zhong, G. Heuss, V. Misra, H. Luan, C. Lee & D. Kwong

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Electrical properties of Ru and RuO2 gate electrodes for Si- PMOSFET with ZrO2 and Zr-silicate dielectrics

Journal of Electronic Materials, 30(12), 1493–1498.

By: H. Zhong, G. Heuss, Y. Suh, V. Misra & S. Hong

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Applied Physics Letters, 78(26), 4166–4168.

By: V. Misra, G. Heuss & H. Zhong

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

IEEE Electron Device Letters, 21(12), 593–595.

By: H. Zhong, G. Heuss & V. Misra

Source: NC State University Libraries
Added: August 6, 2018