Works (8)
2004 journal article
Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1), 175–179.
2003 journal article
Effect of the composition on the electrical properties of TaSixNy metal gate electrodes
IEEE ELECTRON DEVICE LETTERS, 24(7), 439–441.
2003 journal article
Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F79–F82.
2002 journal article
Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis
APPLIED PHYSICS LETTERS, 80(8), 1403–1405.
2001 journal article
Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics
APPLIED PHYSICS LETTERS, 78(8), 1134–1136.
2001 article
Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics
Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493–1498.
2001 journal article
Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2
Applied Physics Letters, 78(26), 4166–4168.
2000 journal article
Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS
IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595.