Works (8)

Updated: July 5th, 2023 16:01

2004 journal article

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1), 175–179.

By: Y. Suh n, G. Heuss n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Effect of the composition on the electrical properties of TaSixNy metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 24(7), 439–441.

By: Y. Suh n, G. Heuss n, J. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: dual metal gates; gate Electrodes; low work function; MOS capacitors; N diffusion; TaSiN
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F79–F82.

By: Y. Suh n, G. Heuss n, V. Misra n, D. Park & K. Limb

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis

APPLIED PHYSICS LETTERS, 80(8), 1403–1405.

By: Y. Suh n, G. Heuss n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

APPLIED PHYSICS LETTERS, 78(8), 1134–1136.

By: H. Zhong n, G. Heuss n, V. Misra n, H. Luan*, C. Lee* & D. Kwong*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 article

Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493–1498.

By: H. Zhong n, G. Heuss n, Y. Suh n, V. Misra n & S. Hong*

co-author countries: Korea (Republic of) 🇰🇷 United States of America 🇺🇸
author keywords: Ru; RuO2; ZrO2; Zr-silicate; MOS; dielectrics; gate electrodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Applied Physics Letters, 78(26), 4166–4168.

By: V. Misra n, G. Heuss n & H. Zhong n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2000 journal article

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595.

By: H. Zhong n, G. Heuss n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: advanced gatestacks; CMOS; conducting oxides; gate electrodes; metal gates; MOS capacitors; RuO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

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