Gregory P. Heuss

Suh, Y. S., Heuss, G., & Misra, V. (2004). Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1), 175–179. https://doi.org/10.1116/1.1640398

Suh, Y. S., Heuss, G. P., Lee, J. H., & Misra, V. (2003). Effect of the composition on the electrical properties of TaSixNy metal gate electrodes. IEEE ELECTRON DEVICE LETTERS, 24(7), 439–441. https://doi.org/10.1109/LED.2003.814009

Suh, Y. S., Heuss, G. P., Misra, V., Park, D. G., & Limb, K. Y. (2003). Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F79–F82. https://doi.org/10.1149/1.1562599

Suh, Y. S., Heuss, G. P., & Misra, V. (2002). Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis. APPLIED PHYSICS LETTERS, 80(8), 1403–1405. https://doi.org/10.1063/1.1453478

Zhong, H. C., Heuss, G., Misra, V., Luan, H. F., Lee, C. H., & Kwong, D. L. (2001). Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics. APPLIED PHYSICS LETTERS, 78(8), 1134–1136. https://doi.org/10.1063/1.1347402

Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics. JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493–1498. https://doi.org/10.1007/s11664-001-0164-2

Misra, V., Heuss, G. P., & Zhong, H. (2001). Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2. Applied Physics Letters, 78(26), 4166–4168. https://doi.org/10.1063/1.1380240

Zhong, H. C., Heuss, G., & Misra, V. (2000). Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS. IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595. https://doi.org/10.1109/55.887476