@article{li_zhong_tang_jia_2015, title={Reliable antifuse one-time-programmable scheme with charge pump for postpackage repair of DRAM}, volume={23}, number={9}, journal={IEEE Transactions on Very Large Scale Integration (VLSI) Systems}, author={Li, X. and Zhong, H. C. and Tang, Z. H. and Jia, C.}, year={2015}, pages={1956–1960} }
 @misc{misra_zhong_hong_2005, title={High/low work function metal alloys for integrated circuit electrodes}, volume={6,873,020}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Misra, V. and Zhong, H. and Hong, S.}, year={2005} }
 @article{lee_kim_hong_zhong_chen_misra_2005, title={Properties of Ta-Mo alloy gate electrode for n-MOSFET}, volume={40}, ISSN={["1573-4803"]}, DOI={10.1007/s10853-005-2108-3}, number={9-10}, journal={JOURNAL OF MATERIALS SCIENCE}, author={Lee, CK and Kim, JY and Hong, SN and Zhong, HC and Chen, B and Misra, V}, year={2005}, month={May}, pages={2693–2695} }
 @misc{jeon_zhong_2004, title={Method for forming a field effect transistor having a high-k gate dielectric and related structure}, volume={6,797,572}, number={2004 Sep. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Jeon, J. S. and Zhong, H.}, year={2004} }
 @article{misra_zhong_lazar_2002, title={Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS}, volume={23}, ISSN={["0741-3106"]}, DOI={10.1109/LED.2002.1004233}, abstractNote={In this letter, low resistivity Ru and Ru-Ta alloy films, deposited via reactive sputtering, were evaluated as gate electrodes for p- and n-MOSFET devices, respectively. MOSFETs fabricated via a conventional process flow indicated that the work functions of Ru and Ru-Ta alloys were compatible with p- and n-MOSFET devices, respectively. Both of the metal gated devices eliminated gate depletion effects. Good MOSFET characteristics, such as I/sub DS/-V/sub GS/ and mobility, were obtained for both Ru-gated PMOSFETs and Ru-Ta gated NMOSFETs.}, number={6}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Misra, V and Zhong, HC and Lazar, H}, year={2002}, month={Jun}, pages={354–356} }
 @article{zhong_heuss_misra_luan_lee_kwong_2001, title={Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics}, volume={78}, ISSN={["1077-3118"]}, DOI={10.1063/1.1347402}, abstractNote={The rutile stoichiometric phase of RuO2, deposited via reactive sputtering, was evaluated as a gate electrode on chemical vapor deposited ZrO2 and Zr silicate for Si–p-type metal–oxide–semiconductor (PMOS) devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400, 600, and 800 °C in N2. X-ray diffraction was measured to study grain structure and interface reactions. The resistivity of RuO2 films was 65.0 μΩ cm after 800 °C annealing. Electrical properties were evaluated on MOS capacitors, which indicated that the work function of RuO2 was ∼5.1 eV, compatible with PMOS devices. Post-RuO2 gate annealing up to 800 °C, resulted in only a 1.4 Å equivalent oxide thickness (Tox-eq) change and 0.2 V flatband voltage change for Zr silicate and a 4 Å Tox-eq change for ZrO2 dielectrics. Tantalum electrodes were also studied on ZrO2 as a comparison of the stability of RuO2 electrodes.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Zhong, HC and Heuss, G and Misra, V and Luan, HF and Lee, CH and Kwong, DL}, year={2001}, month={Feb}, pages={1134–1136} }
 @article{zhong_heuss_suh_misra_hong_2001, title={Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics}, volume={30}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-001-0164-2}, number={12}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Zhong, HC and Heuss, G and Suh, YS and Misra, V and Hong, SN}, year={2001}, month={Dec}, pages={1493–1498} }
 @article{misra_kulkarni_zhong_2001, title={N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics}, volume={30}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-001-0165-1}, number={12}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Misra, V and Kulkarni, M and Zhong, HC}, year={2001}, month={Dec}, pages={1499–1505} }
 @article{misra_heuss_zhong_2001, title={Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2}, volume={78}, DOI={10.1063/1.1380240}, abstractNote={Metal–oxide–semiconductor capacitors were used to study the interaction of Hf and Zr gate electrodes on SiO2, ZrSixOy, and ZrO2. A large reduction in the SiO2 equivalent oxide thickness accompanied by an increase in the leakage current was observed with Hf and Zr electrodes when subjected to anneal temperatures as low as 400 °C. The reduction in electrical thickness as observed from the capacitance–voltage measurements was attributed to the combination of (a) physical thinning of the SiO2 and (b) formation of a high-K layer. A severe instability of Zr and Hf electrodes was also observed on ZrSixOy and ZrO2 dielectrics. This behavior of Zr and Hf gates was attributed to high negative enthalpy of oxide formation and high oxygen solubility resulting in the reduction of the gate dielectric and subsequent oxygen diffusion to the gate electrode.}, number={26}, journal={Applied Physics Letters}, author={Misra, Veena and Heuss, G. P. and Zhong, H.}, year={2001}, pages={4166–4168} }
 @article{zhong_heuss_misra_2000, title={Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS}, volume={21}, ISSN={["0741-3106"]}, DOI={10.1109/55.887476}, abstractNote={The rutile stoichiometric phase of RuO/sub 2/, deposited via reactive sputtering, was evaluated as a gate electrode for Si-PMOS devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400/spl deg/C and 600/spl deg/C in N/sub 2/. X-ray diffraction patterns were measured to study grain structure and interface reactions. Very low resistivity values were observed and were found to be a strong function of temperature. Electrical properties were evaluated on MOS capacitors, which indicated that the workfunction of RuO/sub 2/ was compatible with PMOS devices. Excellent stability of oxide thickness, flatband voltage and gate current as a function of temperature was also found. Breakdown fields were also measured for the samples before and after annealing.}, number={12}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Zhong, HC and Heuss, G and Misra, V}, year={2000}, month={Dec}, pages={593–595} }