Huicai Zhong

Li, X., Zhong, H. C., Tang, Z. H., & Jia, C. (2015). Reliable antifuse one-time-programmable scheme with charge pump for postpackage repair of DRAM. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 23(9), 1956–1960.

Misra, V., Zhong, H., & Hong, S. (2005). High/low work function metal alloys for integrated circuit electrodes. Washington, DC: U.S. Patent and Trademark Office.

Lee, C. K., Kim, J. Y., Hong, S. N., Zhong, H. C., Chen, B., & Misra, V. (2005). Properties of Ta-Mo alloy gate electrode for n-MOSFET. JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693–2695. https://doi.org/10.1007/s10853-005-2108-3

Jeon, J. S., & Zhong, H. (2004). Method for forming a field effect transistor having a high-k gate dielectric and related structure. Washington, DC: U.S. Patent and Trademark Office.

Misra, V., Zhong, H. C., & Lazar, H. (2002). Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS. IEEE ELECTRON DEVICE LETTERS, 23(6), 354–356. https://doi.org/10.1109/LED.2002.1004233

Zhong, H. C., Heuss, G., Misra, V., Luan, H. F., Lee, C. H., & Kwong, D. L. (2001). Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics. APPLIED PHYSICS LETTERS, 78(8), 1134–1136. https://doi.org/10.1063/1.1347402

Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics. JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493–1498. https://doi.org/10.1007/s11664-001-0164-2

Misra, V., Kulkarni, M., & Zhong, H. C. (2001, December). N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics. JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1499–1505. https://doi.org/10.1007/s11664-001-0165-1

Misra, V., Heuss, G. P., & Zhong, H. (2001). Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2. Applied Physics Letters, 78(26), 4166–4168. https://doi.org/10.1063/1.1380240

Zhong, H. C., Heuss, G., & Misra, V. (2000). Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS. IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595. https://doi.org/10.1109/55.887476