Christopher A. Parker

Works (10)

Updated: July 5th, 2023 16:03

2002 personal communication

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

By: J. Roberts, C. Parker, J. Muth, S. Leboeuf, M. Aumer, S. Bedair, M. Reed

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

By: M. Reed n, N. El-Masry n, H. Stadelmaier n, M. Ritums n, M. Reed n, C. Parker n, J. Roberts n, S. Bedair n

Source: Web Of Science
Added: August 6, 2018

2001 journal article

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MATERIALS LETTERS, 51(6), 500–503.

By: M. Reed n, M. Ritums n, H. Stadelmaier n, M. Reed n, C. Parker n, S. Bedair n, N. El-Masry n

author keywords: magnetic; semiconductors; Ga-Mn-N
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

By: D. Alexson n, L. Bergman n, R. Nemanich n, M. Dutta*, M. Stroscio*, C. Parker n, S. Bedair n, N. El-Masry n, F. Adar

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

By: M. Reed n, N. El-Masry n, C. Parker n, J. Roberts n & S. Bedair n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n & N. El-Masry n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

By: V. Joshkin n, C. Parker n, S. Bedair n, J. Muth n, I. Shmagin n, R. Kolbas n, E. Piner n, R. Molnar *

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

By: L. Robins *, A. Paul *, C. Parker n, J. Roberts, S. Bedair n, E. Piner n, N. El-Masry n

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n, N. El-Masry n, L. Robins *

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

By: V. Joshkin*, C. Parker n, S. Bedair n, L. Krasnobaev n, J. Cuomo n, R. Davis n, A. Suvkhanov*

Source: Web Of Science
Added: August 6, 2018

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