Christopher A. Parker

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MATERIALS LETTERS, 51(6), 500–503.

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.