Christopher A. Parker

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1). Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13).

Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., … Bedair, S. M. (2001). Room temperature ferromagnetic properties of (Ga, Mn)N. APPLIED PHYSICS LETTERS, 79(21), 3473–3475. https://doi.org/10.1063/1.1419231

Reed, M. L., Ritums, M. K., Stadelmaier, H. H., Reed, M. J., Parker, C. A., Bedair, S. M., & El-Masry, N. A. (2001). Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices. MATERIALS LETTERS, 51(6), 500–503. https://doi.org/10.1016/S0167-577X(01)00342-1

Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., … Adar, F. (2001). Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys. JOURNAL OF APPLIED PHYSICS, 89(1), 798–800. https://doi.org/10.1063/1.1330760

Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. (2000). Critical layer thickness determination of GaN/InGaN/GaN double heterostructures. Applied Physics Letters, 77(25), 4121–4123. https://doi.org/10.1063/1.1334361

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., & El-Masry, N. A. (1999). Determination of the critical layer thickness in the InGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 75(18), 2776–2778. https://doi.org/10.1063/1.125146

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999). Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 86(1), 281–288. https://doi.org/10.1063/1.370727

Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1999). Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22). https://doi.org/10.1557/s1092578300002490

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., El-Masry, N. A., & Robins, L. H. (1999). Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568. https://doi.org/10.1063/1.125079

Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998). Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC. APPLIED PHYSICS LETTERS, 72(22), 2838–2840. https://doi.org/10.1063/1.121474