Wilhelm P. Platow

Response to 'Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]'

Journal of Applied Physics, 93(6), 3679.

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

Journal of Applied Physics, 91(2), 732–738.

TiC nanoisland formation on 6H-SiC(0001)(Si)

Journal of Applied Physics, 91(9), 6081–6084.

Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001) - art. no. 115312

Physical Review. B, Condensed Matter and Materials Physics, 6311(11), 5312.

Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si)

Journal of Applied Physics, 90(12), 5924–5927.