@article{gonzalez_silva_griffis_russell_2002, title={Improvements in focused ion beam micromachining of interconnect materials}, volume={20}, ISSN={["2166-2746"]}, DOI={10.1116/1.1515310}, abstractNote={Focused ion beam micromachining (FIBM) of integrated circuits continues to be an important tool for design debug, editing, and verification; for metrology; and for process control. FIBM of copper interconnects has presented challenges not faced when micromachining aluminum interconnects and the introduction of low-k dielectrics present additional challenges. A new approach to chemically assisted FIBM of thin film Cu, SiO2, and SiLK low-k material using polar precursor molecules has been investigated. Polar alcohols were used to reduce the sputter rate of SiO2 and SiLK while having a minimal effect on the Cu sputter rate. A new FIBM process based on the reduction of the FIB Ga+ energy from the typical 25 to 15 keV is also introduced. The new low energy FIBM process was shown to increase the sputter rate of polycrystalline Cu with strong (111) crystallographic texture by a factor of 2.5. This increase in the sputter rate of Cu combined with a slight reduction of the sputter rate of SiO2 and SiLK results in ...}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Gonzalez, JC and Silva, MIN and Griffis, DP and Russell, PE}, year={2002}, pages={2700–2704} }
 @article{gonzalez_plentz_koche_rodrigues_moreira_de oliveira_da silva_andrade_2001, title={Magneto-optical properties of stacked self-assembled InAs quantum dots}, volume={89}, number={7}, journal={Journal of Applied Physics}, author={Gonzalez, J. C. and Plentz, F. and Koche, N. and Rodrigues, W. N. and Moreira, M. V. B. and De Oliveira, A. G. and Da Silva, M. I. N. and Andrade, M. S.}, year={2001}, pages={3760–3762} }