Mark Conrad Benjamin

Chemical vapor cleaning of 6H-SiC surfaces

Journal of the Electrochemical Society, 146(9), 3448–3454.

Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces

Journal of Applied Physics, 86(8), 4483–4490.

Characterization of electron emitting surfaces of diamond and III-V nitrides

Diamond Films and Technology, 8(4), 211–223.

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

Journal of Applied Physics, 84(4), 2086–2090.

Electron emission properties of crystalline diamond and III-nitride surfaces

Applied Surface Science, 132(1998 June), 694–703.