@article{brewer_wicaksana_maria_kingon_franzen_2005, title={Investigation of the electrical and optical properties of iridium oxide by reflectance FTIR spectroscopy and density functional theory calculations}, volume={313}, number={38355}, journal={Chemical Physics}, author={Brewer, S. H. and Wicaksana, D. and Maria, J. P. and Kingon, A. I. and Franzen, S.}, year={2005}, pages={25–31} }
 @article{maria_wickaksana_parrette_kingon_2002, title={Crystallization in SiO2-metal oxide alloys}, volume={17}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.2002.0234}, abstractNote={HfO2–SiO2 and La2O3–SiO2 amorphous alloys were prepared, and their crystallization behavior was studied. The results suggest that higher permittivities can be achieved in the La-containing system without devitrification. The crystallization mechanisms between systems are distinctly different, yet observations are consistent with bulk material. Hf-containing materials tend toward phase separation, while La-containing materials tend toward silicate formation. For Hf-containing films, negligible thickness or time dependence was observed. In La-containing films, rapid thermal anneals could improve crystallization resistance, and thickness effects related to interface reactions were observed. These behaviors are discussed in the context of phase diagrams and metastable immiscibility.}, number={7}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Maria, JP and Wickaksana, D and Parrette, J and Kingon, AI}, year={2002}, month={Jul}, pages={1571–1579} }
 @article{stemmer_chen_keding_maria_wicaksana_kingon_2002, title={Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures}, volume={92}, ISSN={["1089-7550"]}, DOI={10.1063/1.1481970}, abstractNote={Electron energy-loss spectroscopy and high-resolution transmission electron microscopy were used to investigate ZrO2 layers grown by electron-beam evaporation in a molecular-beam epitaxy system. ZrO2/Si layers were investigated before and after uncapped annealing at 1000 °C under different oxygen partial pressures. The thickness of a SiO2-like, low-dielectric constant layer at the silicon interface was found to depend on the oxygen partial pressure during annealing. At oxygen partial pressures of about 10−4 torr the interfacial silicon oxide thickness increased through oxygen diffusion through the ZrO2 layer and silicon consumption at the interface. At oxygen partial pressures in the range of approximately 10−5 torr, only a thin (1 nm) interfacial silicon oxide layer was present, as required for low-equivalent oxide thicknesses of gate stacks incorporating alternative oxides. Further reduction of the oxygen partial pressures (about 10−7 torr) during annealing resulted in zirconium silicide formation at the interface. ZrO2 films annealed at the optimal partial pressure for a thin interfacial oxide were found to crystallize and contain no silicon. High-resolution analytical capabilities afforded by scanning transmission electron microscopy techniques proved essential in analyzing the stability of these ultrathin layers.}, number={1}, journal={JOURNAL OF APPLIED PHYSICS}, author={Stemmer, S and Chen, ZQ and Keding, R and Maria, JP and Wicaksana, D and Kingon, AI}, year={2002}, month={Jul}, pages={82–86} }
 @article{yoon_wicaksana_kim_kim_kingon_2001, title={Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O-3 thin-film capacitors with Pt- or Ir-based top electrodes}, volume={16}, ISSN={["2044-5326"]}, DOI={10.1557/JMR.2001.0163}, abstractNote={The degradation behavior of polarization and leakage current characteristics of sol-gel-derived (Pb,La)(Zr,Ti)O3 (PLZT) thin films, with Pt, Ir, and IrO2 top electrodes, by annealing under a 4% H2/96% N2 atmosphere were investigated. The leakage current behaviors of Pt/PLZT/Pt and IrO2/PLZT/Pt capacitors annealed at 300 °C for 20 min in 4% H2 were well consistent with the space-charge-influenced injection model proposed. However, IrO2/PLZT/Pt capacitors recovered at 700 °C for 10 min in Ar ambient after hydrogen anneal were not consistent with the proposed model because a conducting phase of IrPb was formed between the top electrode and PLZT during the recovery anneal at 700 °C in Ar ambient and modified the Schottky barrier height. The true leakage current behavior of IrO2/PLZT/Pt capacitors recovered after hydrogen forming are similar to those of Ir/PLZT/Pt capacitors without the hydrogen-forming gas anneal. The P–E loops of Pt/PLZT/Pt and Ir/PLZT/Pt capacitors showed good recovery through recovery anneal after H2 treatment. However, IrO2/PLZT/Pt capacitors depended on the recovery anneal atmosphere (Ar or O2).}, number={4}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Yoon, SG and Wicaksana, D and Kim, DJ and Kim, SH and Kingon, AI}, year={2001}, month={Apr}, pages={1185–1189} }
 @article{maria_wicaksana_kingon_busch_schulte_garfunkel_gustafsson_2001, title={High temperature stability in lanthanum and zirconia-based gate dielectrics}, volume={90}, ISSN={["0021-8979"]}, DOI={10.1063/1.1391418}, abstractNote={Gate dielectrics composed primarily of lanthana and zirconia were prepared by reactive evaporation. The stability of the layers during high temperature anneals was investigated. By controlling the oxygen partial pressure during heat treatment, lanthana and zirconia films could be protected against reaction with the underlying Si substrate and against the growth of low-ε interface layers. The electrical thickness of the dielectrics could be maintained after a 900 °C exposure. The critical oxygen pressure at 900 °C for low-ε interface formation beneath ZrO2 and La2O3 dielectrics was ∼2e−4 Torr. The interfaces that formed beneath the ZrO2 and La2O3 layers are distinctly different. The sub-ZrO2 interface, influenced primarily by phase separation, tends towards pure SiO2, while the sub-La2O3 interface, influenced primarily by silicate formation, tends towards a La–Si–O alloy. For both materials, reducing the oxygen pressure to values below 10−7 Torr resulted in rapid degradation of the metal oxide. This dielectric degradation is believed to be linked to SiO evaporation. These results suggest that at high temperatures, a window of optimal oxygen partial pressure exists in which the stability of many oxides in contact with silicon can be achieved.}, number={7}, journal={JOURNAL OF APPLIED PHYSICS}, author={Maria, JP and Wicaksana, D and Kingon, AI and Busch, B and Schulte, H and Garfunkel, E and Gustafsson, T}, year={2001}, month={Oct}, pages={3476–3482} }