Works (22)

Updated: July 5th, 2023 16:00

2005 journal article

Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction

Journal of Applied Physics, 97(1).

By: R. Barabash, G. Ice, W. Liu, S. Einfeldt, A. Roskowski & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy

Physica Status Solidi. A, Applications and Materials Science, 202(5), 732–738.

By: R. Barabash, G. Ice, W. Liu, S. Einfeldt, D. Hommel, A. Roskowski, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates

Diamond and Related Materials, 13(4-8), 1125–1129.

By: T. Paskova*, E. Valcheva*, P. Paskov*, B. Monemar, A. Roskowski n, R. Davis n, B. Beaumont, P. Gibart

author keywords: GaN quasi-substrates; microstructure; emission distribution; TEM; CL
Sources: Web Of Science, Crossref
Added: August 6, 2018

2003 journal article

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400.

By: J. Hartman n, A. Roskowski n, Z. Reitmeier n, K. Tracy n, R. Davis n & R. Nemanich n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers

JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83.

By: E. Preble n, P. Miraglia n, A. Roskowski n, W. Vetter*, M. Dudley* & R. Davis n

author keywords: characterization; defects; X-ray diffraction; metalorganic vapor phase epitaxy; nitrides; semiconducting silicon compounds
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Electron energy distribution during high-field transport in AlN

JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771.

By: R. Collazo n, R. Schlesser n, A. Roskowski n, P. Miraglia n, R. Davis n & Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262.

By: T. Smith n, W. Mecouch n, P. Miraglia n, A. Roskowski n, P. Hartlieb n & R. Davis n

author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25.

By: P. Miraglia*, E. Preble n, A. Roskowski n, S. Einfeldt n & R. Davis n

author keywords: atomic force microscopy; growth models; line defects; surface defects; metalorganic vapor phase epitaxy; gallium nitride
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

THIN SOLID FILMS, 437(1-2), 140–149.

By: P. Miraglia*, E. Preble*, A. Roskowski*, S. Einfeldt*, S. Lim, Z. Liliental-Weber, R. Davis*

author keywords: surface defects; atomic force microscopy; metalorganic vapor phase epitaxy; indium gallium nitride
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

By: U. Schwarz, P. Schuck, M. Mason, R. Grober, A. Roskowski, S. Einfeldt, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 article

Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679.

By: P. Hartlieb n, A. Roskowski n, R. Davis n, W. Platow n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160.

By: P. Hartlieb n, A. Roskowski n, R. Davis n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

APPLIED PHYSICS LETTERS, 81(11), 1984–1986.

By: P. Schuck*, R. Grober*, A. Roskowski n, S. Einfeldt n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016.

By: A. Roskowski n, E. Preble n, S. Einfeldt n, P. Miraglia n & R. Davis n

author keywords: chemical vapor deposition; semiconductor growth; thin films; topography
Source: Web Of Science
Added: August 6, 2018

2002 article

Maskless pendeo-epitaxial growth of GaN films

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428.

By: A. Roskowski n, E. Preble n, S. Einfeldt n, P. Miraglia n & R. Davis n

author keywords: pendeo-epitaxy (PE); gallium nitride (GaN); metalorganic vapor phase epitaxy (MOVPE); atomic force microscopy (AFM); x-ray diffraction (XRD); photoluminescence (PL)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

JOURNAL OF APPLIED PHYSICS, 91(2), 732–738.

By: P. Hartlieb n, A. Roskowski n, R. Davis n, W. Platow n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

By: A. Roskowski, E. Preble, S. Einfeldt, P. Miraglia, J. Schuck, R. Grober, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

APPLIED PHYSICS LETTERS, 80(6), 953–955.

By: S. Einfeldt n, A. Roskowski n, E. Preble n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Student Use (and Non-Use) of Instructional Technology

Journal of SMET Education: Innovations and Research, 2(2002), 41–45.

By: A. Roskowski, R. Felder & L. Bullard

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150.

By: A. Roskowski n, P. Miraglia n, E. Preble n, S. Einfeldt n & R. Davis n

author keywords: characterization; defects; surface structure; metalorganic vapor phase epitaxy; pendeoepitaxy; semiconducting gallium compounds
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 conference paper

Instructional software: if you build It, they may or may not come

2001 ASEE Annual Conference Proceedings, ASEE, June 2001. Washington, D.C.: American Society for Engineering Education.

By: A. Roskowski, R. Felder & L. Bullard

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films

Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.

By: A. Roskowski n, P. Miraglia n, E. Preble n, S. Einfeldt n, T. Stiles n, R. Davis n, J. Schuck*, R. Grober*, U. Schwarz*

Source: NC State University Libraries
Added: August 6, 2018

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