Amy Michel Roskowski

Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction

Journal of Applied Physics, 97(1).

White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy

Physica Status Solidi. A, Applications and Materials Science, 202(5), 732–738.

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400.

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers

JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83.

Electron energy distribution during high-field transport in AlN

JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771.

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262.

HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates

Diamond and Related Materials, 13(4-8), 1125–1129.

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25.

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

THIN SOLID FILMS, 437(1-2), 140–149.

Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC

Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679.

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160.

Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence

APPLIED PHYSICS LETTERS, 81(11), 1984–1986.

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016.

Maskless pendeo-epitaxial growth of GaN films

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428.

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

JOURNAL OF APPLIED PHYSICS, 91(2), 732–738.

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

APPLIED PHYSICS LETTERS, 80(6), 953–955.

Student Use (and Non-Use) of Instructional Technology

Journal of SMET Education: Innovations and Research, 2(2002), 41–45.

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150.

Instructional software: if you build It, they may or may not come

2001 ASEE Annual Conference Proceedings, ASEE, June 2001. Washington, D.C.: American Society for Engineering Education.

Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films

Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.