Leah A. Bergman

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

Growth and characterization of GaN single crystals

JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106.

Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

APPLIED PHYSICS LETTERS, 76(15), 1969–1971.

Confined phonons and phonon-mode properties of III–V nitrides with wurtzite crystal structure

Physica B: Condensed Matter, 263-264, 510–513.

Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 734–739.

Phonon dynamics and lifetimes of AlN and GaN crystallites

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65).

Raman analysis and field emission study of ion beam etched diamond films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 700–704.

Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure

PHYSICAL REVIEW B, 59(20), 12977–12982.

Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN

JOURNAL OF APPLIED PHYSICS, 85(7), 3535–3539.

Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles

MATERIALS LETTERS, 41(5), 229–233.

Long-wavelength optical phonons in ternary nitride-based crystals

Physical Review B, 58(23), 15283–15287.

Photoluminescence from mechanically milled Si and SiO2 powders

PHYSICAL REVIEW B, 55(12), 7615–7623.

Raman analysis of the configurational disorder in AlxGa1-xN films

APPLIED PHYSICS LETTERS, 71(15), 2157–2159.

Sublimation growth and characterization of bulk aluminum nitride single crystals

JOURNAL OF CRYSTAL GROWTH, 179(3-4), 363–370.

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.