2005 journal article
Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152(9), F138–F141.
2005 journal article
Physical and electrical analysis of RuxYy alloys for gate electrode applications
APPLIED PHYSICS LETTERS, 86(5).
2004 journal article
Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1), 175–179.
2004 journal article
Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films
THIN SOLID FILMS, 450(2), 341–345.
2003 journal article
Effect of the composition on the electrical properties of TaSixNy metal gate electrodes
IEEE ELECTRON DEVICE LETTERS, 24(7), 439–441.
2003 journal article
Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F79–F82.
2002 journal article
Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis
APPLIED PHYSICS LETTERS, 80(8), 1403–1405.
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