Works (4)

Updated: July 5th, 2023 15:58

2010 journal article

A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon

JOURNAL OF APPLIED PHYSICS, 108(3).

By: F. Karoui n & A. Karoui*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104.

By: F. Karoui n, A. Karoui n, G. Rozgonyi n, M. Hourai & K. Sueoka *

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

JOURNAL OF APPLIED PHYSICS, 96(6), 3255–3263.

By: A. Karoui n, F. Karoui n, G. Rozgonyi n & D. Yang *

co-author countries: China 🇨🇳 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(12), G771–G777.

By: A. Karoui n, F. Karoui n, G. Rozgonyi n, M. Hourai & K. Sueoka

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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