2010 journal article
A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon
JOURNAL OF APPLIED PHYSICS, 108(3).
By: F. Karoui n & A. Karoui*
2004 journal article
Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics
Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104.
By: F. Karoui n, A. Karoui n, G. Rozgonyi n, M. Hourai & K. Sueoka *
Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects
JOURNAL OF APPLIED PHYSICS, 96(6), 3255–3263.
By: A. Karoui n, F. Karoui n, G. Rozgonyi n & D. Yang *
2003 journal article
Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(12), G771–G777.
By: A. Karoui n, F. Karoui n, G. Rozgonyi n, M. Hourai & K. Sueoka
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