Works (17)

Updated: July 5th, 2023 16:00

2010 journal article

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates

Acta Materialia, 58(6), 2165–2175.

By: Z. Reitmeier, S. Einfeldt, R. Davis, X. Zhang, X. Fang & S. Mahajan

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates

ACTA MATERIALIA, 57(14), 4001–4008.

By: Z. Reitmeier*, S. Einfeldt*, R. Davis*, X. Zhang*, X. Fang* & S. Mahajan*

author keywords: Group III nitrides; Dislocations; Epitaxy; Heteroepitaxy; Electron microscopy
Source: Web Of Science
Added: August 6, 2018

2007 article

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89.

By: S. Bishop n, J. Park n, J. Gu*, B. Wagner n, Z. Reltmeier, D. Batchelor n, D. Zakharov*, Z. Liliental-Weber*, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Effect of thermal annealing on the metastable optical properties of GaN thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24(4), 1051–1054.

By: Y. Chang*, R. Kolbas*, Z. Reitmeier* & R. Davis*

co-author countries: Taiwan, Province of China 🇹🇼
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512.

By: B. Wagner*, Z. Reitmeier*, J. Park*, D. Bachelor*, D. Zakharov, Z. Liliental-Weber, R. Davis*

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 127(2-3), 169–179.

By: J. Park n, Z. Reitmeier n, D. Fothergill n, X. Zhang n, J. Muth n & R. Davis n

author keywords: light emitting diodes; ultraviolet; AlGaN; carrier-blocking layers
Source: Web Of Science
Added: August 6, 2018

2005 journal article

A printable form of single-crystalline gallium nitride for flexible optoelectronic systems

Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164–1168.

By: K. Lee, J. Lee, H. Hwang, Z. Reitmeier, R. Davis, J. Rogers, R. Nuzzo

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(10), 7254–7259.

By: J. Park n, D. Fothergill n, X. Zhang n, Z. Reitmeier n, J. Muth n & R. Davis n

author keywords: light emitting diode; ultraviolet; AlGaN; carrier blocking layer; quantum well
Source: Web Of Science
Added: August 6, 2018

2005 journal article

On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates

Journal of Applied Physics, 97(8).

By: R. Kroger, S. Einfeldt, R. Chierchia, D. Hommel, Z. Reitmeier, R. Davis, Q. Liu

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77.

Source: Web Of Science
Added: August 6, 2018

2005 journal article

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

By: D. Zakharov, Z. Liliental-Weber, B. Wagner, Z. Reitmeier, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 chapter

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

By: S. Bishop, E. Preble, C. Hallin, A. Henry, L. Storasta, H. Jacobson, B. Wagner, Z. Reitmeier, E. Janzen, R. Davis

Ed(s): J. R. Madar & E. Blanquet

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

By: Z. Reitmeier, J. Park, W. Mecouch & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400.

By: J. Hartman n, A. Roskowski n, Z. Reitmeier n, K. Tracy n, R. Davis n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Gallium nitride and related materials: challenges in materials processing

ACTA MATERIALIA, 51(19), 5961–5979.

By: R. Davis n, S. Einfeldt*, E. Preble*, A. Roskowski*, Z. Reitmeier n & P. Miraglia*

co-author countries: Germany 🇩🇪
author keywords: compound semiconductors; thin films; dislocations; strain; pendeo-epitaxy
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 129–141.

By: S. Einfeldt n, Z. Reitmeier n & R. Davis n

author keywords: stresses; surface structure; metalorganic vapor phase epitaxy; nitrides
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

By: Y. Chang n, A. Cai n, M. Johnson n, J. Muth n, R. Kolbas n, Z. Reitmeier n, S. Einfeldt n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

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