Works (17)

2010 journal article

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates

Acta Materialia, 58(6), 2165–2175.

By: Z. Reitmeier, S. Einfeldt, R. Davis, X. Zhang, X. Fang & S. Mahajan

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates

Acta Materialia, 57(14), 4001–4008.

By: Z. Reitmeier, S. Einfeldt, R. Davis, X. Zhang, X. Fang & S. Mahajan

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)

Journal of Crystal Growth, 300(1), 83–89.

By: S. Bishop, J. Park, J. Gu, B. Wagner, Z. Reltmeier, D. Batchelor, D. Zakharov, Z. Liliental-Weber, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Effect of thermal annealing on the metastable optical properties of GaN thin films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 1051–1054.

By: Y. Chang, R. Kolbas, Z. Reitmeier & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

Journal of Crystal Growth, 290(2), 504–512.

By: B. Wagner, Z. Reitmeier, J. Park, D. Bachelor, D. Zakharov, Z. Liliental-Weber, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 127(2-3), 169–179.

By: J. Park, Z. Reitmeier, D. Fothergill, X. Zhang, J. Muth & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

A printable form of single-crystalline gallium nitride for flexible optoelectronic systems

Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164–1168.

By: K. Lee, J. Lee, H. Hwang, Z. Reitmeier, R. Davis, J. Rogers, R. Nuzzo

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 44(10), 7254–7259.

By: J. Park, D. Fothergill, X. Zhang, Z. Reitmeier, J. Muth & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates

Journal of Applied Physics, 97(8).

By: R. Kroger, S. Einfeldt, R. Chierchia, D. Hommel, Z. Reitmeier, R. Davis, Q. Liu

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 23(1), 72–77.

By: W. Mecouch, B. Wagner, Z. Reitmeier, R. Davis, C. Pandarinath, B. Rodriguez, R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

Physical Review. B, Condensed Matter and Materials Physics, 71(23).

By: D. Zakharov, Z. Liliental-Weber, B. Wagner, Z. Reitmeier, E. Preble & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 chapter

Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization

In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.

By: S. Bishop, E. Preble, C. Hallin, A. Henry, L. Storasta, H. Jacobson, B. Wagner, Z. Reitmeier, E. Janzen, R. Davis

Ed(s): J. R. Madar & E. Blanquet

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

By: Z. Reitmeier, J. Park, W. Mecouch & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(2), 394–400.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Gallium nitride and related materials: challenges in materials processing

Acta Materialia, 51(19), 5961–5979.

By: R. Davis, S. Einfeldt, E. Preble, A. Roskowski, Z. Reitmeier & P. Miraglia

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Surface morphology and strain of GaN layers grown using 6H- SiC(0001) substrates with different buffer layers

Journal of Crystal Growth, 253(1-4), 129–141.

By: S. Einfeldt, Z. Reitmeier & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electron-beam-induced optical memory effects in GaN

Applied Physics Letters, 80(15), 2675–2677.

By: Y. Chang, A. Cai, M. Johnson, J. Muth, R. Kolbas, Z. Reitmeier, S. Einfeldt, R. Davis

Source: NC State University Libraries
Added: August 6, 2018