Sven Einfeldt

Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X. Y., Fang, X. L., & Mahajan, S. (2010). Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates. Acta Materialia, 58(6), 2165–2175.

Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X., Fang, X., & Mahajan, S. (2009). Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates. ACTA MATERIALIA, 57(14), 4001–4008. https://doi.org/10.1016/j.actamat.2009.04.026

Barabash, R. I., Ice, G. E., Roder, C., Budai, J., Liu, W., Figge, S., … Davis, R. F. (2007, May). Characterization of growth defects in thin GaN layers with X-ray microbeam. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 244, pp. 1735–1742. https://doi.org/10.1002/pssb.200675113

Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003). Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag. JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948. https://doi.org/10.1063/1.1598630

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25. https://doi.org/10.1016/S0022-0248(03)00970-9

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. (2003). Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures. THIN SOLID FILMS, 437(1-2), 140–149. https://doi.org/10.1016/S0040-6090(03)00611-4

Schwarz, U. T., Schuck, P. J., Mason, M. D., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC. Physical Review. B, Condensed Matter and Materials Physics, 67(4), 045321–045321.

Einfeldt, S., Reitmeier, Z. J., & Davis, R. F. (2003). Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 129–141. https://doi.org/10.1016/S0022-0248(03)01039-X

Schuck, P. J., Grober, R. D., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2002). Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence. APPLIED PHYSICS LETTERS, 81(11), 1984–1986. https://doi.org/10.1063/1.1506948

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002). Electron-beam-induced optical memory effects in GaN. APPLIED PHYSICS LETTERS, 80(15), 2675–2677. https://doi.org/10.1063/1.1469222

Kasic, A., Schubert, M., Einfeldt, S., & Hommel, D. (2002, July 5). Infrared spectroscopic ellipsometry - a new tool for characterization of semiconductor heterostructures. VIBRATIONAL SPECTROSCOPY, Vol. 29, pp. 121–124. https://doi.org/10.1016/S0924-2031(01)00197-7

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002). Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence. IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016. https://doi.org/10.1109/JQE.2002.801005

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, May). Maskless pendeo-epitaxial growth of GaN films. JOURNAL OF ELECTRONIC MATERIALS, Vol. 31, pp. 421–428. https://doi.org/10.1007/s11664-002-0095-6

Kasic, A., Schubert, M., Off, J., Scholz, F., Einfeldt, S., & Hommel, D. (2002). Optical phonons in hexagonal AlxInyGa1-x-yN (y approximate to 0.12). Physica Status Solidi. B, Basic Solid State Physics, 234(3), 970–974.

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., Schuck, J., Grober, R., & Davis, R. F. (2002). Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy. Opto-Electronics Review, 10(4), 261–270.

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. (2002). Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE. JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150. https://doi.org/10.1016/S0022-0248(02)00943-0