Robert W. Ashcraft

Effect of N2 plasma on yttrium oxide and yttrium–oxynitride dielectrics

Niu, D., Ashcraft, R. W., Hinkle, C., & Parsons, G. N. (2004, March 9). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 22, pp. 445–451.

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

Gougousi, T., Niu, D., Ashcraft, R. W., & Parsons, G. N. (2003, October 24). Applied Physics Letters, Vol. 83, pp. 3543–3545.

Chemical, Physical, and Electrical Characterizations of Oxygen Plasma Assisted Chemical Vapor Deposited Yttrium Oxide on Silicon

Niu, D., Ashcraft, R. W., Chen, Z., Stemmer, S., & Parsons, G. N. (2003, January 1). Journal of The Electrochemical Society, Vol. 150, pp. F102–F109.

Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon

Niu, D., Ashcraft, R. W., Chen, Z., Stemmer, S., & Parsons, G. N. (2002, July 22). Applied Physics Letters, Vol. 81, pp. 676–678.

Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications

Niu, D., Ashcraft, R. W., Kelly, M. J., Chambers, J. J., Klein, T. M., & Parsons, G. N. (2002, May 1). Journal of Applied Physics, Vol. 91, pp. 6173–6180.

Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers

Stemmer, S., Klenov, D. O., Chen, Z., Niu, D., Ashcraft, R. W., & Parsons, G. N. (2002, July 22). Applied Physics Letters, Vol. 81, pp. 712–714.

Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon

Niu, D., Ashcraft, R. W., & Parsons, G. N. (2002, May 13). Applied Physics Letters, Vol. 80, pp. 3575–3577.