Robert W. Ashcraft

Niu, D., Ashcraft, R. W., Hinkle, C., & Parsons, G. N. (2004). Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 445–451. https://doi.org/10.1116/1.1666880

Gougousi, T., Niu, D., Ashcraft, R. W., & Parsons, G. N. (2003). Carbonate formation during post-deposition ambient exposure of high-k dielectrics. APPLIED PHYSICS LETTERS, 83(17), 3543–3545. https://doi.org/10.1063/1.1623316

Niu, D., Ashcraft, R. W., Chen, Z., Stemmer, S., & Parsons, G. N. (2003). Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F102–F109. https://doi.org/10.1149/1.1566415

Niu, D., Ashcraft, R. W., Chen, Z., Stemmer, S., & Parsons, G. N. (2002). Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon. APPLIED PHYSICS LETTERS, 81(4), 676–678. https://doi.org/10.1063/1.1496138

Niu, D., Ashcraft, R. W., Kelly, M. J., Chambers, J. J., Klein, T. M., & Parsons, G. N. (2002). Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications. JOURNAL OF APPLIED PHYSICS, 91(9), 6173–6180. https://doi.org/10.1063/1.1468253

Stemmer, S., Klenov, D. O., Chen, Z. Q., Niu, D., Ashcraft, R. W., & Parsons, G. N. (2002). Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers. APPLIED PHYSICS LETTERS, 81(4), 712–714. https://doi.org/10.1063/1.1496500

Niu, D., Ashcraft, R. W., & Parsons, G. N. (2002). Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon. APPLIED PHYSICS LETTERS, 80(19), 3575–3577. https://doi.org/10.1063/1.1477268