2005 article

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., … Bedair, S. M. (2005, March 2). Applied Physics Letters.

By: M. Reed n, F. Arkun n, E. Berkman n, N. Elmasry n, J. Zavada*, M. Luen n, M. Reed n, S. Bedair n

topics (OpenAlex): ZnO doping and properties; GaN-based semiconductor devices and materials; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2004 article

Dependence of ferromagnetic properties on carrier transfer at GaMnN∕GaN:Mg interface

Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. (2004, October 25). Applied Physics Letters.

By: F. Arkun n, M. Reed n, E. Berkman n, N. El-Masry n, J. Zavada*, M. Reed n, S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Ga2O3 and related materials
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Source: Web Of Science
Added: August 6, 2018

2002 article

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., … Davis, R. F. (2002, March 1). Journal of Crystal Growth.

author keywords: decomposition; growth from vapor; single crystal growth; gallium compounds; nitrides semi-conducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

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