Christopher Hinkle

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices. MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262. https://doi.org/10.1016/j.mee.2003.12.047

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, September 20). A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys. SURFACE SCIENCE, Vol. 566, pp. 772–776. https://doi.org/10.1016/j.susc.2004.06.010

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 15). A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys. APPLIED SURFACE SCIENCE, Vol. 234, pp. 429–433. https://doi.org/10.1016/j.apsusc.2004.05.075

Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, April). Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity. MICROELECTRONIC ENGINEERING, Vol. 72, pp. 304–309. https://doi.org/10.1016/j.mee.2004.01.008

Niu, D., Ashcraft, R. W., Hinkle, C., & Parsons, G. N. (2004). Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 445–451. https://doi.org/10.1116/1.1666880

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, September 20). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers. SURFACE SCIENCE, Vol. 566, pp. 1185–1189. https://doi.org/10.1016/j.susc.2004.06.084

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers. Applied Surface Science, 234(37990), 240–245. https://doi.org/10.1016/j.apsusc.2004-05.076

Soares, G. V., Bastos, K. P., Pezzi, R. P., Miotti, L., Driemeier, C., Baumvol, I. J. R., … Lucovsky, G. (2004). Nitrogen bonding, stability, and transport in AlON films on Si. APPLIED PHYSICS LETTERS, 84(24), 4992–4994. https://doi.org/10.1063/1.1763230

Edge, L. F., Schlom, D. G., Brewer, R. T., Chabal, Y. J., Williams, JR, Chambers, S. A., … Schubert, J. (2004). Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon. APPLIED PHYSICS LETTERS, 84(23), 4629–4631. https://doi.org/10.1063/1.1759065

Bastos, K. P., Pezzi, R. P., Miotti, L., Soares, G. V., Driemeier, C., Morais, J., … Lucovsky, G. (2004). Thermal stability of plasma-nitrided aluminum oxide films on Si. APPLIED PHYSICS LETTERS, 84(1), 97–99. https://doi.org/10.1063/1.1638629

Hinkle, C., & Lucovsky, G. (2003, June 30). Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3. APPLIED SURFACE SCIENCE, Vol. 216, pp. 124–132. https://doi.org/10.1016/S0169-4332(03)00499-9

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices. SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805. https://doi.org/10.1016/S0038-1101(02)00152-1

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002). Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.