Works (13)

Updated: July 5th, 2023 15:59

2010 patent

Molecular memory devices including solid-state dielectric layers and related methods

By: V. Misra, R. Shrivastava, Z. Chen & G. Mathur

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates

APPLIED PHYSICS LETTERS, 90(14).

By: S. Gowda n, G. Mathur n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 5(3), 258–264.

By: S. Gowda n, G. Mathur n, Q. Li n, S. Surthi n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: charge storage molecules; hybrid silicon/molecular devices; molecular electronics; monolayer; MOSFETs; redox-active molecules
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Approach for investigating lateral conduction in self-assembled monolayers

APPLIED PHYSICS LETTERS, 87(26).

By: S. Gowda n, G. Mathur n, Q. Li n, S. Surthi n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 patent

Hybrid molecular memory devices and methods of use thereof

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misra, S. Gowda & G. Mathur

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 4(2), 278–283.

By: G. Mathur n, S. Gowda n, Q. Li n, S. Surthi n, Q. Zhao n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: charge retention; molecular memories; monolayer; redox-active molecules
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Redox-active monolayers on nano-scale silicon electrodes

NANOTECHNOLOGY, 16(2), 257–261.

By: Q. Zhao n, Y. Luo n, S. Surthi n, Q. Li n, G. Mathur n, S. Gowda n, P. Larson*, M. Johnson*, V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon

ADVANCED MATERIALS, 16(2), 133-+.

By: Q. Li n, G. Mathur n, S. Gowda n, S. Surthi n, Q. Zhao n, L. Yu n, J. Lindsey n, D. Bocian*, V. Misra*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Multiple-bit storage properties of porphyrin monolayers on SiO2

APPLIED PHYSICS LETTERS, 85(10), 1829–1831.

By: Q. Li n, S. Surthi n, G. Mathur n, S. Gowda n, Q. Zhao n, T. Sorenson, R. Tenent, K. Muthukumaran n, J. Lindsey n, V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces

JOURNAL OF ORGANIC CHEMISTRY, 69(5), 1444–1452.

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces

JOURNAL OF ORGANIC CHEMISTRY, 69(5), 1453–1460.

By: R. Loewe n, A. Ambroise n, K. Muthukumaran n, K. Padmaja n, A. Lysenko n, G. Mathur n, Q. Li n, D. Bocian n, V. Misra n, J. Lindsey n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications

APPLIED PHYSICS LETTERS, 83(1), 198–200.

By: Q. Li n, S. Surthi n, G. Mathur n, S. Gowda n, V. Misra n, T. Sorenson, R. Tenent, W. Kuhr ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications

APPLIED PHYSICS LETTERS, 81(8), 1494–1496.

By: Q. Li n, G. Mathur n, M. Homsi n, S. Surthi n, V. Misra n, V. Malinovskii n, K. Schweikart n, L. Yu n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

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