Charles C. Fulton

Strzhemechny, Y. M., Bataiev, M., Tumakha, S. P., Goss, S. H., Hinkle, C. L., Fulton, C. C., … Brillson, L. J. (2008). Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232–243.

Fleming, I., Fulton, C. C., Lucovsky, G., Rowe, J. E., Ulrich, M. D., & Luening, J. (2007). Local bonding analysis of the valence and conduction band features of TiO2. JOURNAL OF APPLIED PHYSICS, 102(3). https://doi.org/10.1063/1.2764004

Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006, May 15). "Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006). JOURNAL OF APPLIED PHYSICS, Vol. 99. https://doi.org/10.1063/1.2201707

Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2006). Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure. JOURNAL OF APPLIED PHYSICS, 99(6). https://doi.org/10.1063/1.2181282

Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Luning, J. (2006, November). Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 2097–2101. https://doi.org/10.1016/j.radphyschem.2005.07.062

Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595. https://doi.org/10.1016/j.radphyschem.2006.05.004

Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006). Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy. JOURNAL OF APPLIED PHYSICS, 99(2). https://doi.org/10.1063/1.2163984

Lucovsky, G., Hong, J. G., Fulton, C. C., Stoute, N. A., Zou, Y., Nemanich, R. J., … Schlom, D. G. (2005). Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830. https://doi.org/10.1016/j.microrel.2004.11.038

Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J. L., … Afanase'v, VV. (2005, August 22). Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings. THIN SOLID FILMS, Vol. 486, pp. 129–135. https://doi.org/10.1016/j.tsf.2004.11.233

Lucovsky, G., Fulton, C. C., Zhang, Y., Zou, Y., Luning, J., Edge, L. F., … Rogers, B. R. (2005). Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5(1), 65–83. https://doi.org/10.1109/TDMR.2005.845804

Lucovsky, G., Zhang, Y., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 917–919. https://doi.org/10.1016/j.elspec.2005.01.251

Coppa, B. J., Fulton, C. C., Kiesel, S. M., Davis, R. F., Pandarinath, C., Burnette, J. E., … Smith, D. J. (2005). Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces. JOURNAL OF APPLIED PHYSICS, 97(10). https://doi.org/10.1063/1.1898436

Fulton, C. C., Lucovsky, G., Zhang, Y., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 913–916. https://doi.org/10.1016/j.elspec.2005.01.098

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices. MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262. https://doi.org/10.1016/j.mee.2003.12.047

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, September 20). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers. SURFACE SCIENCE, Vol. 566, pp. 1185–1189. https://doi.org/10.1016/j.susc.2004.06.084

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers. Applied Surface Science, 234(37990), 240–245. https://doi.org/10.1016/j.apsusc.2004-05.076

Coppa, B. J., Fulton, C. C., Hartlieb, P. J., Davis, R. F., Rodriguez, B. J., Shields, B. J., & Nemanich, R. J. (2004). In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces. JOURNAL OF APPLIED PHYSICS, 95(10), 5856–5864. https://doi.org/10.1063/1.1695596

Fulton, C. C., Cook, T. E., Lucovsky, G., & Nemanich, R. J. (2004). Interface instabilities and electronic properties of ZrO2 on silicon (100). JOURNAL OF APPLIED PHYSICS, 96(5), 2665–2673. https://doi.org/10.1063/1.1776313

Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2004). Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100). APPLIED PHYSICS LETTERS, 84(4), 580–582. https://doi.org/10.1063/1.1639944

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004, August). Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2221–2235. https://doi.org/10.1002/pssb.200404938

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., & Ade, H. (2004). X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2132–2138. https://doi.org/10.1116/1.1771670

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the GaN (0001)/HfO2 interface. Journal of Applied Physics, 94(11), 7155–7158. https://doi.org/10.1063/1.1618374

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the Si3N4/GaN (0001) interface. JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954. https://doi.org/10.1063/1.1601314

Lucovsky, G., Raynor, G. B., Zhang, Y., Fulton, C. C., Nemanich, R. J., Appel, G., … Whitten, J. L. (2003, May 15). Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices. APPLIED SURFACE SCIENCE, Vol. 212, pp. 563–569. https://doi.org/10.1016/S0169-4332(03)00055-2

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004. https://doi.org/10.1063/1.1559424

Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2002). Electronic states at the interface of Ti-Si oxide on Si(100). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1726–1731. https://doi.org/10.1116/1.1493785