@article{kim_dix_thompson_murrell_schmid_gallagher_rockett_2006, title={Gene expression in head hair follicles plucked from men and women}, volume={36}, number={2}, journal={Annals of Clinical and Laboratory Science}, author={Kim, S. J. and Dix, D. J. and Thompson, K. E. and Murrell, R. N. and Schmid, J. E. and Gallagher, J. E. and Rockett, J. C.}, year={2006}, pages={115–126} }
 @article{seelecke_kim_ball_smith_2005, title={A rate-dependent two-dimensional free energy model for ferroelectric single crystals}, volume={17}, ISSN={["1432-0959"]}, DOI={10.1007/s00161-005-0207-7}, abstractNote={The one-dimensional free energy model for ferroelectric materials developed by Smith et al. [29–31] is generalized to two dimensions. The two-dimensional free energy potential proposed in this paper consists of four energy wells that correspond to four variants of the material. The wells are separated by four saddle points, representing the barriers for 90°-switching processes, and a local maximum, across which 180°-switching processes take place. The free energy potential is combined with evolution equations for the variant fractions based on the theory of thermally activated processes. The model is compared to recent measurements on BaTiO3 single crystals by Burcsu et al. [8], and predicitions are made concerning the response to the application of in-plane multi-axial electric fields at various frequencies and loading directions. The kinetics of the 90°- and 180°-switching processes are discussed in detail.}, number={4}, journal={CONTINUUM MECHANICS AND THERMODYNAMICS}, author={Seelecke, S and Kim, SJ and Ball, BL and Smith, RC}, year={2005}, month={Dec}, pages={337–350} }
 @article{flock_kim_asar_kim_aspnes_2004, title={Integrated rotating-compensator polarimeter for real-time measurements and analysis of organometallic chemical vapor deposition}, volume={455}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2004.01.069}, abstractNote={We describe a single-beam rotating-compensator rotating-sample spectroscopic polarimeter (RCSSP) integrated with an organometallic chemical vapor deposition (OMCVD) reactor for in-situ diagnostics and control of epitaxial growth, and report representative results. The rotating compensator generates Fourier coefficients that provide information about layer thicknesses and compositions, while sample rotation provides information about optical anisotropy and therefore surface chemistry. We illustrate capabilities with various examples, including the simultaneous determination of 〈ε〉 and α10 during exposure of (001)GaAs to TMG, the heteroepitaxial growth of GaP on GaAs, and the growth of (001)GaSb with TMG and TMSb. Using a recently developed approach for quantitatively determining thickness and dielectric function of depositing layers, we find the presence of metallic Ga on TMG-exposed (001)GaAs. The (001)GaSb data show that Sb deposition is self-limiting, in contrast to expectations.}, number={2004 May 1}, journal={THIN SOLID FILMS}, author={Flock, K and Kim, SJ and Asar, M and Kim, IK and Aspnes, DE}, year={2004}, month={May}, pages={639–644} }
 @article{kim_flock_asar_kim_aspnes_2004, title={Real-time characterization of GaSb homo- and heteroepitaxy}, volume={22}, ISSN={["1071-1023"]}, DOI={10.1116/1.1771669}, abstractNote={We examine the homo- and heteroepitaxial growth of moderately thick (∼700 nm) layers of GaSb with the objectives of optimizing growth conditions and determining the initial phase of heteroepitaxy on (001)GaAs. Real-time spectroscopic ellipsometry (RTSE) data show that the (001)GaSb surface degrades immediately in excess trimethylgallium (TMG), but both (001)GaSb and As-terminated (001)GaAs surfaces are stable in trimethylantimony (TMSb). The surface-dimer contribution to the optical-anisotropy (OA) signal of (001)GaSb is small and generally masked by structural (roughness) effects, hence it is not useful for determining surface stoichometry. However, we show that laser light scattering (LLS) data do allow the V/III ratio to be fine-tuned during growth to minimize macroscopic roughness. TEM micrographs show that our GaSb/GaAs heterointerface is relatively defect-free except for the necessary local accommodation of lattice mismatch. The initial phase of heteroepitaxy on (001)GaAs occurs here as a coexistence of separate regions of GaAs and GaSb.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Kim, S and Flock, KL and Asar, M and Kim, IK and Aspnes, DE}, year={2004}, pages={2233–2239} }
 @article{kim_ghong_kim_kim_aspnes_mori_yao_koo_2003, title={Dielectric functions of InxGa1-xAs alloys}, volume={68}, ISSN={["1098-0121"]}, DOI={10.1103/physrevb.68.115323}, abstractNote={We present room-temperature pseudodielectric function spectra $〈\ensuremath{\varepsilon}〉=〈{\ensuremath{\varepsilon}}_{1}〉+i〈{\ensuremath{\varepsilon}}_{2}〉$ of ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ films grown on (100) InP by solid-source molecular-beam epitaxy. A wet-chemical etching procedure was used to remove overlayers and obtain the best approximation to the bulk dielectric responses $\ensuremath{\varepsilon}={\ensuremath{\varepsilon}}_{1}+i{\ensuremath{\varepsilon}}_{2}$ of the films. By lineshape fitting we determined the dependences of the ${E}_{1}{,E}_{1}+{\ensuremath{\Delta}}_{1}{,E}_{0}^{\ensuremath{'}}{,E}_{0}^{\ensuremath{'}}+{\ensuremath{\Delta}}_{0}^{\ensuremath{'}},$ and ${E}_{2}$ critical-point energies on x. Using a parametric semiconductor model we represent these spectra analytically to allow $〈\ensuremath{\varepsilon}〉$ to be calculated as a continuous function of x. These results are expected to be useful for design purposes, for example of nanostructures and multilayer systems involving ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}.$}, number={11}, journal={PHYSICAL REVIEW B}, author={Kim, TJ and Ghong, TH and Kim, YD and Kim, SJ and Aspnes, DE and Mori, T and Yao, T and Koo, BH}, year={2003}, month={Sep} }
 @article{ihn_ghong_kim_kim_aspnes_yao_koo_2003, title={Optical properties of InGaAs alloy films in the E-2 region by spectroscopic ellipsometry}, volume={42}, number={2003 Feb}, journal={Journal of the Korean Physical Society}, author={Ihn, Y. S. and Ghong, T. H. and Kim, Y. D. and Kim, S. J. and Aspnes, D. E. and Yao, T. and Koo, B. H.}, year={2003}, pages={S242–245} }
 @article{ghong_kim_kim_kim_aspnes_choi_yu_2003, title={Study of the dielectric function of ZnS by spectroscopic ellipsometry}, volume={42}, number={2003 Feb}, journal={Journal of the Korean Physical Society}, author={Ghong, T. H. and Kim, T. J. and Kim, Y. D. and Kim, S. J. and Aspnes, D. E. and Choi, Y. D. and Yu, Y. M.}, year={2003}, pages={S238–241} }
 @article{kim_ihn_kim_kim_aspnes_yao_shim_koo_2002, title={Pseudodielectric functions of InGaAs alloy films grown on InP}, volume={81}, ISSN={["0003-6951"]}, DOI={10.1063/1.1509093}, abstractNote={We present room-temperature pseudodielectric function spectra 〈ε〉 of InxGa1−xAs films grown on (100) InP by solid-source molecular-beam epitaxy. A wet-chemical etching procedure is used to remove overlayers and obtain the best approximation to the bulk dielectric responses ε of the films. By line shape fitting, we determined the x dependences of the E1 and E1+Δ1 critical-point energies and that of the Δ1 bowing parameter. The results are in good agreement with the predictions of a universal tight-binding model.}, number={13}, journal={APPLIED PHYSICS LETTERS}, author={Kim, TJ and Ihn, YS and Kim, YD and Kim, SJ and Aspnes, DE and Yao, T and Shim, K and Koo, BH}, year={2002}, month={Sep}, pages={2367–2369} }