Growth and characterization of GaN single crystals - Balkas, CM; Sitar, Z; Bergman, L; Shmagin, IK; Muth, JF; Kolbas, R; Nemanich, RJ; Davis, RF (JOURNAL OF CRYSTAL GROWTH, 2000)
Keywords: gallium nitride; crystal growth; vapor transport; photoluminescence; optical absorption

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy - Joshkin, VA; Parker, CA; Bedair, SM; Muth, JF; Shmagin, IK; Kolbas, RM; Piner, EL; Molnar, RJ (JOURNAL OF APPLIED PHYSICS, 1999)

Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials - Shmagin, I. K.; Muth, J. F.; Kolbas, R. M. (1999)

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition - Dupuis, R. D.; Grudowski, P. A.; Eiting, C. J.; Shmagin, I. K.; Kolbas, R. M.; Rosner, S. J. (Bristol; Philadelphia: Institute of Physics Pub., 1998)

Optical metastability in InGaN/GaN heterostructures - Shmagin, I. K.; Muth, J. F.; Kolbas, R. M.; Dupuis, R. D.; Grudowski, P. A.; Eiting, C. J.; Park, J.; Shelton, B. S.; Lambert, D. J. H. (Bristol; Philadelphia: Institute of Physics Pub., 1998)

Optical properties of wide bandgap II-V nitride semiconductors - Kolbas, R. M.; Shmagin, I. K.; Muth, J. F. (1998)

Visible-blind GaN Schottky barrier detectors grown on Si(111) - Osinsky, A; Gangopadhyay, S; Yang, JW; Gaska, R; Kuksenkov, D; Temkin, H; Shmagin, IK; Chang, YC; Muth, JF; Kolbas, RM (APPLIED PHYSICS LETTERS, 1998)

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements - Muth, JF; Lee, JH; Shmagin, IK; Kolbas, RM; Casey, HC; Keller, BP; Mishra, UK; DenBaars, SP (APPLIED PHYSICS LETTERS, 1997)

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition - Keller, S; Keller, BP; Kapolnek, D; Mishra, UK; DenBaars, SP; Shmagin, IK; Kolbas, RM; Krishnankutty, S (JOURNAL OF CRYSTAL GROWTH, 1997)

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration - Shmagin, IK; Muth, JF; Kolbas, RM; Krishnankutty, S; Keller, S; Mishra, UK; DenBaars, SP (JOURNAL OF APPLIED PHYSICS, 1997)

Optical data storage in InGaN/GaN heterostructures - Shmagin, IK; Muth, JF; Kolbas, RM; Dupuis, RD; Grudowski, PA; Eiting, CJ; Park, J; Shelton, BS; Lambert, DJH (APPLIED PHYSICS LETTERS, 1997)

Optical metastability in bulk GaN single crystals - Shmagin, IK; Muth, JF; Lee, JH; Kolbas, RM; Balkas, CM; Sitar, Z; Davis, RF (APPLIED PHYSICS LETTERS, 1997)

Photoluminescence characteristics of GaN/InGaN/GaN quantum wells - Shmagin, IK; Muth, JF; Kolbas, RM; Krishnankutty, S; Keller, S; Abare, AC; Coldren, LA; Mishra, UK; DenBaars, SP (JOURNAL OF ELECTRONIC MATERIALS, 1997)
Keywords: GaN/InGaN; photoluminescence (PL); quantum wells (QWs)

Photoluminescence from mechanically milled Si and SiO2 powders - Shen, TD; Shmagin, I; Koch, CC; Kolbas, RM; Fahmy, Y; Bergman, L; Nemanich, RJ; McClure, MT; Sitar, Z; Quan, MX (PHYSICAL REVIEW B, 1997)

Reconfigurable optical properties in InGaN/GaN quantum wells - Shmagin, IK; Muth, JF; Kolbas, RM; Mack, MP; Abare, AC; Keller, S; Coldren, LA; Mishra, UK; DenBaars, SP (APPLIED PHYSICS LETTERS, 1997)

Growth of bulk AIN and GaN single crystals by sublimation - Balkas, C. M.; Sitar, Z.; Zheleva, T.; Bergman, L.; Shmagin, I. K.; Muth, J. F.; Kolbas, R. M.; Nemanich, R.; Davis, R. F. (Pittsburgh, Pa.: Materials Research Society, 1996)

Stimulated emission and gain measurements from InGaN/GaN heterostructures - Shmagin, I. K.; Muth, J. F.; Kolbas, R. M.; Krishnankkutty, S.; Keller, S.; Mishra, U. K.; DenBaars, S. P. (III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449), 1996)