Irina Konstantinova Shmagin

Balkas, C. M., Sitar, Z., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., … Davis, R. F. (2000). Growth and characterization of GaN single crystals. JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106. https://doi.org/10.1016/S0022-0248(99)00445-5

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999). Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 86(1), 281–288. https://doi.org/10.1063/1.370727

Shmagin, I. K., Muth, J. F., & Kolbas, R. M. (1999). Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials. Washington, DC: U.S. Patent and Trademark Office.

Dupuis, R. D., Grudowski, P. A., Eiting, C. J., Shmagin, I. K., Kolbas, R. M., & Rosner, S. J. (1998). Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition. Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 231–234. Bristol; Philadelphia: Institute of Physics Pub.

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., … Lambert, D. J. H. (1998). Optical metastability in InGaN/GaN heterostructures. Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

Kolbas, R. M., Shmagin, I. K., & Muth, J. F. (1998). Optical properties of wide bandgap II-V nitride semiconductors. In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

Osinsky, A., Gangopadhyay, S., Yang, J. W., Gaska, R., Kuksenkov, D., Temkin, H., … Kolbas, R. M. (1998). Visible-blind GaN Schottky barrier detectors grown on Si(111). APPLIED PHYSICS LETTERS, 72(5), 551–553. https://doi.org/10.1063/1.120755

Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., … DenBaars, S. P. (1997). Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements. APPLIED PHYSICS LETTERS, 71(18), 2572–2574. https://doi.org/10.1063/1.120191

Keller, S., Keller, B. P., Kapolnek, D., Mishra, U. K., DenBaars, S. P., Shmagin, I. K., … Krishnankutty, S. (1997, January). Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition. JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 349–352. https://doi.org/10.1016/S0022-0248(96)00553-2

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Mishra, U. K., & DenBaars, S. P. (1997). Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration. JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023. https://doi.org/10.1063/1.364058

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., … Lambert, D. J. H. (1997). Optical data storage in InGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 71(10), 1382–1384. https://doi.org/10.1063/1.119900

Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., & Davis, R. F. (1997). Optical metastability in bulk GaN single crystals. APPLIED PHYSICS LETTERS, 71(4), 455–457. https://doi.org/10.1063/1.119577

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … DenBaars, S. P. (1997, March). Photoluminescence characteristics of GaN/InGaN/GaN quantum wells. JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 325–329. https://doi.org/10.1007/s11664-997-0172-y

Shen, T. D., Shmagin, I., Koch, C. C., Kolbas, R. M., Fahmy, Y., Bergman, L., … Quan, M. X. (1997). Photoluminescence from mechanically milled Si and SiO2 powders. PHYSICAL REVIEW B, 55(12), 7615–7623. https://doi.org/10.1103/physrevb.55.7615

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Mack, M. P., Abare, A. C., Keller, S., … DenBaars, S. P. (1997). Reconfigurable optical properties in InGaN/GaN quantum wells. APPLIED PHYSICS LETTERS, 71(11), 1455–1457. https://doi.org/10.1063/1.119935

Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., … Davis, R. F. (1996). Growth of bulk AIN and GaN single crystals by sublimation. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankkutty, S., Keller, S., Mishra, U. K., & DenBaars, S. P. (1996). Stimulated emission and gain measurements from InGaN/GaN heterostructures. In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.