@article{windl_liang_lopatin_duscher_2004, title={Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces}, volume={114-15}, number={Dec 15 2004}, journal={Materials Science & Engineering. B, Solid-state Materials for Advanced Technology}, author={Windl, W. and Liang, T. and Lopatin, S. and Duscher, G.}, year={2004}, pages={156–161} }
 @article{lopatin_pennycook_narayan_duscher_2002, title={Z-contrast imaging of dislocation cores at the GaAs/Si interface}, volume={81}, ISSN={["0003-6951"]}, DOI={10.1063/1.1511808}, abstractNote={The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs without simulation. Three different types of dislocations were identified. As expected, a dangling bond was found in the atomic structure of the 60° dislocation. One of the observed 90° dislocations had the reconstructed atomic core structure (with no dangling bonds). The core structure of the other 90° dislocation exhibited a dangling bond.}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Lopatin, S and Pennycook, SJ and Narayan, J and Duscher, G}, year={2002}, month={Oct}, pages={2728–2730} }