Indong Kim

Works (5)

Updated: July 5th, 2023 15:59

2004 article

Effect of Post-metallization Annealing for Alternative Gate Stack Devices

Kim, I., Han, S. K., & Osburn, C. M. (2004, January 1). Journal of The Electrochemical Society.

By: I. Kim n, S. Han n & C. Osburn n

topics (OpenAlex): Semiconductor materials and devices; Anodic Oxide Films and Nanostructures; Semiconductor materials and interfaces
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 article

Entanglement in the Interaction Between Two Quantum Oscillators Systems

Kim, I., & Iafrate, G. J. (2004, November 1). Foundations of Physics Letters.

By: I. Kim n & G. Iafrate n

author keywords: entanglement; coupled-boson representation; spontaneous emission
topics (OpenAlex): Quantum Information and Cryptography; Quantum Computing Algorithms and Architecture; Quantum Mechanics and Applications
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 article

Stability of Advanced Gate Stack Devices

Kim, I., Han, S. K., & Osburn, C. M. (2004, January 1). Journal of The Electrochemical Society.

By: I. Kim n, S. Han n & C. Osburn n

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Advancements in Semiconductor Devices and Circuit Design
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Computational leakage: Grover's algorithm with imperfections

European Physical Journal. D, Atomic, Molecular and Optical Physics, 23(2), 299–303.

By: P. Song & I. Kim

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., … Ozturk, M. C. (2002, March 1). IBM Journal of Research and Development.

By: C. Osburn n, I. Kim n, S. Han n, I. De *, K. Yee*, S. Gannavaram*, S. Lee*, C. Lee* ...

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Ferroelectric and Negative Capacitance Devices
TL;DR: The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed and it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

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