Indong Kim

Works (5)

Updated: July 5th, 2023 15:59

2004 journal article

Effect of post-metallization annealing for alternative gate stack devices

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29–F35.

By: I. Kim n, S. Han n & C. Osburn n

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Source: Web Of Science
Added: August 6, 2018

2004 journal article

Entanglement in the interaction between two quantum oscillator systems

FOUNDATIONS OF PHYSICS LETTERS, 17(6), 507–534.

By: I. Kim n & G. Iafrate n

author keywords: entanglement; coupled-boson representation; spontaneous emission
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Stability of advanced gate stack devices

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F22–F28.

By: I. Kim n, S. Han n & C. Osburn n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Computational leakage: Grover's algorithm with imperfections

European Physical Journal. D, Atomic, Molecular and Optical Physics, 23(2), 299–303.

By: P. Song & I. Kim

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.

By: C. Osburn n, I. Kim n, S. Han n, I. De *, K. Yee, S. Gannavaram*, S. Lee*, C. Lee* ...

TL;DR: The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed and it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

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