Works (5)
Updated: July 5th, 2023 15:59
2004 journal article
Effect of post-metallization annealing for alternative gate stack devices
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29–F35.
open access via citeseerx.ist.psu.edu (repository)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2004 journal article
Entanglement in the interaction between two quantum oscillator systems
FOUNDATIONS OF PHYSICS LETTERS, 17(6), 507–534.
author keywords: entanglement; coupled-boson representation; spontaneous emission
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
9. Industry, Innovation and Infrastructure
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2004 journal article
Stability of advanced gate stack devices
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F22–F28.
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Computational leakage: Grover's algorithm with imperfections
European Physical Journal. D, Atomic, Molecular and Optical Physics, 23(2), 299–303.
Source: NC State University Libraries
Added: August 6, 2018
2002 journal article
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.
TL;DR:
The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed and it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage.
(via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018
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