Works (5)
Updated: July 5th, 2023 15:59
2004 journal article
Effect of post-metallization annealing for alternative gate stack devices
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29–F35.
citeseerx.ist.psu.edu (repository)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2004 journal article
Entanglement in the interaction between two quantum oscillator systems
FOUNDATIONS OF PHYSICS LETTERS, 17(6), 507–534.
author keywords: entanglement; coupled-boson representation; spontaneous emission
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
9. Industry, Innovation and Infrastructure
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2004 journal article
Stability of advanced gate stack devices
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F22–F28.
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Computational leakage: Grover's algorithm with imperfections
European Physical Journal. D, Atomic, Molecular and Optical Physics, 23(2), 299–303.
Source: NC State University Libraries
Added: August 6, 2018
2002 journal article
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.
TL;DR:
The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed and it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage.
(via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018
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