Indong Kim

Kim, I., Han, S. K., & Osburn, C. M. (2004). Effect of post-metallization annealing for alternative gate stack devices. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29–F35. https://doi.org/10.1149/1.1636181

Kim, I., & Iafrate, G. J. (2004). Entanglement in the interaction between two quantum oscillator systems. FOUNDATIONS OF PHYSICS LETTERS, 17(6), 507–534. https://doi.org/10.1007/s10702-004-0902-9

Kim, I., Han, S. K., & Osburn, C. M. (2004). Stability of advanced gate stack devices. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F22–F28. https://doi.org/10.1149/1.1636180

Song, P. H., & Kim, I. (2003). Computational leakage: Grover's algorithm with imperfections. European Physical Journal. D, Atomic, Molecular and Optical Physics, 23(2), 299–303.

Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., … Ozturk, M. C. (2002). Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315. https://doi.org/10.1147/rd.462.0299