Works (16)

2006 journal article

Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films

Electrochemical and Solid State Letters, 9(3), F13–15.

By: J. Choi, S. Kim, H. Kang, H. Jeon & C. Bae

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Effects of N-2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 900–907.

By: J. Choi, S. Kim, J. Kim, H. Kang, H. Jeon & C. Bae

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Characteristics of HfO2 thin films grown by plasma atomic layer deposition

Applied Physics Letters, 87(5).

By: J. Kim, S. Kim, H. Jeon, M. Cho, K. Chung & C. Bae

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods

Journal of Applied Physics, 98(9).

By: J. Kim, S. Kim, H. Kang, J. Choi, H. Jeon, M. Cho, K. Chung, S. Back, K. Yoo, C. Bae

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition

Applied Physics Letters, 86(25).

By: M. Park, J. Koo, J. Kim, H. Jeon, C. Bae & C. Krug

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(6), 2379–2383.

By: C. Bae, C. Krug & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(6), 2402–2410.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(6), 2411–2418.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Surface Science, 566(Sep 20 2004), 356–360.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Microelectronic Engineering, 72(04-Jan), 236–240.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Applied Surface Science, 234(37990), 475–479.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

Journal of Applied Physics, 96(5), 2674–2680.

By: C. Bae, C. Krug, G. Lucovsky, A. Chakraborty & U. Mishra

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Applied Physics Letters, 84(26), 5413–5415.

By: C. Bae, C. Krug, G. Lucovsky, A. Chakraborty & U. Mishra

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing

Applied Surface Science, 216(04-Jan), 119–123.

By: C. Bae, G. Rayner & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Oxide formation and passivation for micro- and nano-electronic devices

Applied Surface Science, 212(2003 May 15), 644–648.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Solid-State Electronics, 47(1), 71–76.

By: Y. Lee, Y. Wu, C. Bae, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018