Choelhwyi Bae

Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films

Electrochemical and Solid State Letters, 9(3), F13–15.

Effects of N-2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 900–907.

Characteristics of HfO2 thin films grown by plasma atomic layer deposition

Applied Physics Letters, 87(5).

Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods

Journal of Applied Physics, 98(9).

Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition

Applied Physics Letters, 86(25).

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383.

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2402–2410.

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2411–2418.

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 356–360.

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 236–240.

Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 475–479.

Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680.

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Applied Physics Letters, 84(26), 5413–5415.

Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing

Bae, C., Rayner, G. B., & Lucovsky, G. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 119–123.

Oxide formation and passivation for micro- and nano-electronic devices

Bae, C., & Lucovsky, G. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 644–648.

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

SOLID-STATE ELECTRONICS, 47(1), 71–76.