Choelhwyi Bae

Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films

Electrochemical and Solid State Letters, 9(3), F13–15.

Effects of N-2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 900–907.

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383.

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2402–2410.

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2411–2418.

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 356–360.

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 236–240.

Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 475–479.

Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680.

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Applied Physics Letters, 84(26), 5413–5415.

Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing

Bae, C., Rayner, G. B., & Lucovsky, G. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 119–123.

Oxide formation and passivation for micro- and nano-electronic devices

Bae, C., & Lucovsky, G. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 644–648.

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

SOLID-STATE ELECTRONICS, 47(1), 71–76.