2006 journal article
Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films
Electrochemical and Solid State Letters, 9(3), F13β15.
2006 journal article
Effects of N-2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 900β907.
2005 journal article
Characteristics of HfO2 thin films grown by plasma atomic layer deposition
Applied Physics Letters, 87(5).
2005 journal article
Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
Journal of Applied Physics, 98(9).
2005 journal article
Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition
Applied Physics Letters, 86(25).
2004 journal article
Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379β2383.
2004 journal article
Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2402β2410.
2004 journal article
Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2411β2418.
2004 article
Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Bae, C., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 356β360.
2004 article
Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Bae, C., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 236β240.
2004 article
Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Bae, C., & Lucovsky, G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 475β479.
2004 journal article
Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films
JOURNAL OF APPLIED PHYSICS, 96(5), 2674β2680.
2004 journal article
Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures
Applied Physics Letters, 84(26), 5413β5415.
2003 article
Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing
Bae, C., Rayner, G. B., & Lucovsky, G. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 119β123.
2003 article
Oxide formation and passivation for micro- and nano-electronic devices
Bae, C., & Lucovsky, G. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 644β648.
2003 journal article
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
SOLID-STATE ELECTRONICS, 47(1), 71β76.
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