2009 article
Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks
Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luening, J. (2009, March). MICROELECTRONIC ENGINEERING, Vol. 86, pp. 224–234.
2009 journal article
Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817.
2009 journal article
Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry
Journal of Applied Physics, 106(7).
2008 journal article
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates
Applied Surface Science, 254(23), 7933–7937.
2008 journal article
Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates
THIN SOLID FILMS, 517(1), 155–158.
2008 journal article
Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices
MICROELECTRONICS RELIABILITY, 48(3), 364–369.
2008 journal article
Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates
APPLIED PHYSICS LETTERS, 93(18).
2006 journal article
Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride
JOURNAL OF APPLIED PHYSICS, 99(12).
2005 article
Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts
Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.
2002 journal article
UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes
Opto-Electronics Review, 10(4), 251–260.
Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.
Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.