Joseph Preston Long

Works (10)

Updated: July 5th, 2023 15:56

2009 article

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH[sub 4]OH-Based Cleaning for High-k∕Ge MOS Gate Stacks

Seo, H., Chung, K. B., Long, J. P., & Lucovsky, G. (2009, January 1). Journal of The Electrochemical Society.

By: H. Seo*, K. Chung n, J. Long n & G. Lucovsky n

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Diamond and Carbon-based Materials Research
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry

Journal of Applied Physics, 106(7).

By: K. Chung, J. Long, H. Seo, G. Lucovsky & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2008 article

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Lüning, J. (2008, April 9). Applied Surface Science.

By: G. Lucovsky n, S. Lee  n, J. Long n, H. Seo  n & J. Lüning*

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Silicon Nanostructures and Photoluminescence
Source: NC State University Libraries
Added: August 6, 2018

2008 article

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Lüning, J. (2008, May 31). Microelectronic Engineering.

By: G. Lucovsky n, S. Lee n, J. Long n, H. Seo  n & J. Lüning*

author keywords: High-K gate dielectrics; MOS devices; Interfacial transition regions; X-ray absorption spectroscopy; Spectroscopic ellipsometry; Di-vacancy defects; Native Ge dielectrics; Ge Substrates
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

2008 article

Suppression of Ge–O and Ge–N bonding at Ge–HfO2 and Ge–TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates

Lee, S., Long, J. P., Lucovsky, G., & Lüning, J. (2008, August 23). Thin Solid Films.

By: S. Lee n, J. Long n, G. Lucovsky n & J. Lüning*

author keywords: Ge/dielectric interfaces; Remote plasma nitridation of Ge; Band edge defects; Remote plasma deposition; Thermal annealing
topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

2008 article

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Chung, K. B., Seo, H., Long, J. P., & Lucovsky, G. (2008, November 3). Applied Physics Letters.

By: K. Chung n, H. Seo n, J. Long n & G. Lucovsky n

author keywords: annealing; conduction bands; defect states; diffusion; ellipsometry; germanium; hafnium compounds; high-k dielectric thin films; ion-surface impact; X-ray absorption spectra
topics (OpenAlex): Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis; Copper Interconnects and Reliability
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7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2007 article

Suppression of Ge–O and Ge–N bonding at Ge–HfO2 and Ge–TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

Lee, S., Long, J. P., Lucovsky, G., Whitten, J. L., Seo, H., & Lüning, J. (2007, September 4). Microelectronics Reliability, Vol. 48, pp. 364–369.

By: S. Lee  n, J. Long n, G. Lucovsky n, J. Whitten n , H. Seo n & J. Lüning*

topics (OpenAlex): Semiconductor materials and devices; Silicon Nanostructures and Photoluminescence; Electronic and Structural Properties of Oxides
TL;DR: Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides and identifies a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{ sub 1} edge absorptions. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Optical spectroscopic analysis of selected area epitaxially regrown n+ gallium nitride

Wang, D., Park, M., Saripalli, Y. N., Johnson, M. A. L., Zeng, C., Barlage, D. W., & Long, J. P. (2006, June 15). Journal of Applied Physics.

By: D. Wang*, M. Park*, Y. Saripalli n, M. Johnson n, C. Zeng n, D. Barlage n, J. Long n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2005 article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2005, November 29). Journal of Crystal Growth.

By: Y. Saripalli n, C. Zeng n, J. Long n, D. Barlage n, M. Johnson n & D. Braddock

author keywords: ohmic contacts; MOVPE; selected area re-growth; GaN; MOSFET
topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Advancements in Semiconductor Devices and Circuit Design
Source: Web Of Science
Added: August 6, 2018

2002 journal article

UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes

Opto-Electronics Review, 10(4), 251–260.

By: J. Long, S. Varadaraajan, J. Matthews & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

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