2009 conference paper

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

Microelectronic Engineering, 86(3), 224–234.

By: G. Lucovsky, S. Lee, J. Long, H. Seo & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Preparation of native oxide and carbon-minimized Ge surface by NH4OH-based cleaning for high-k/Ge MOS gate stacks

Journal of the Electrochemical Society, 156(11), H813–817.

By: H. Seo, K. Chung, J. Long & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry

Journal of Applied Physics, 106(7).

By: K. Chung, J. Long, H. Seo, G. Lucovsky & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

Applied Surface Science, 254(23), 7933–7937.

By: G. Lucovsky, S. Lee, J. Long, H. Seo & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates

Thin Solid Films, 517(1), 155–158.

By: S. Lee, J. Long, G. Lucovsky & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

Microelectronics Reliability, 48(3), 364–369.

By: S. Lee, J. Long, G. Lucovsky, J. Whitten, H. Seo & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Applied Physics Letters, 93(18).

By: K. Chung, H. Seo, J. Long & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

Journal of Applied Physics, 99(12).

By: D. Wang, M. Park, Y. Saripalli, M. Johnson, C. Zeng, D. Barlage, J. Long

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Journal of Crystal Growth, 287(2), 562–565.

By: Y. Saripalli, C. Zeng, J. Long, D. Barlage, M. Johnson & D. Braddock

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes

Opto-Electronics Review, 10(4), 251–260.

Source: NC State University Libraries
Added: August 6, 2018