2009 article

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luening, J. (2009, March). MICROELECTRONIC ENGINEERING, Vol. 86, pp. 224–234.

By: G. Lucovsky n, S. Lee n, J. Long n, H. Seo n & J. Luening

author keywords: High-K gate dielectrics; MOS devices; Interfacial transition regions; X-ray absorption spectroscopy; Spectroscopic ellipsometry; Di-vacancy defects; Native Ge dielectrics; Ge Substrates
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817.

By: H. Seo*, K. Chung n, J. Long n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2009 journal article

Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry

Journal of Applied Physics, 106(7).

By: K. Chung, J. Long, H. Seo, G. Lucovsky & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

Applied Surface Science, 254(23), 7933–7937.

By: G. Lucovsky n, S. Lee n, J. Long n, H. Seo n & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates

THIN SOLID FILMS, 517(1), 155–158.

By: S. Lee n, J. Long n, G. Lucovsky n & J. Luening

author keywords: Ge/dielectric interfaces; Remote plasma nitridation of Ge; Band edge defects; Remote plasma deposition; Thermal annealing
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

MICROELECTRONICS RELIABILITY, 48(3), 364–369.

By: S. Lee n, J. Long n, G. Lucovsky n, J. Whitten n, H. Seo n & J. Luning

TL;DR: Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides and identifies a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{ sub 1} edge absorptions. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

APPLIED PHYSICS LETTERS, 93(18).

By: K. Chung n, H. Seo n, J. Long n & G. Lucovsky n

author keywords: annealing; conduction bands; defect states; diffusion; ellipsometry; germanium; hafnium compounds; high-k dielectric thin films; ion-surface impact; X-ray absorption spectra
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

JOURNAL OF APPLIED PHYSICS, 99(12).

By: D. Wang*, M. Park*, Y. Saripalli n, M. Johnson n, C. Zeng n, D. Barlage n, J. Long n

Source: Web Of Science
Added: August 6, 2018

2005 article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.

By: Y. Saripalli n, C. Zeng n, J. Long n, D. Barlage n, M. Johnson n & D. Braddock

author keywords: ohmic contacts; MOVPE; selected area re-growth; GaN; MOSFET
Source: Web Of Science
Added: August 6, 2018

2002 journal article

UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes

Opto-Electronics Review, 10(4), 251–260.

Source: NC State University Libraries
Added: August 6, 2018

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