Joseph Preston Long

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luening, J. (2009, March). Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks. MICROELECTRONIC ENGINEERING, Vol. 86, pp. 224–234. https://doi.org/10.1016/j.mee.2008.05.023

Seo, H., Chung, K. B., Long, J. P., & Lucovsky, G. (2009). Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817. https://doi.org/10.1149/1.3212848

Chung, K. B., Long, J. P., Seo, H., Lucovsky, G., & Nordlund, D. (2009). Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry. Journal of Applied Physics, 106(7).

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luning, J. (2008). Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates. Applied Surface Science, 254(23), 7933–7937. https://doi.org/10.1016/j.apsusc.2008.03.157

Lee, S., Long, J. P., Lucovsky, G., & Luening, J. (2008). Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates. THIN SOLID FILMS, 517(1), 155–158. https://doi.org/10.1016/j.tsf.2008.08.099

Lee, S., Long, J. P., Lucovsky, G., Whitten, J. L., Seo, H., & Luning, J. (2008). Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. MICROELECTRONICS RELIABILITY, 48(3), 364–369. https://doi.org/10.1016/j.microrel.2007.07.068

Chung, K. B., Seo, H., Long, J. P., & Lucovsky, G. (2008). Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates. APPLIED PHYSICS LETTERS, 93(18). https://doi.org/10.1063/1.3005422

Wang, D., Park, M., Saripalli, Y. N., Johnson, M. A. L., Zeng, C., Barlage, D. W., & Long, J. P. (2006). Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride. JOURNAL OF APPLIED PHYSICS, 99(12). https://doi.org/10.1063/1.2204755

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts. JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565. https://doi.org/10.1016/j.jcrysgro.2005.10.075

Long, J. P., Varadaraajan, S., Matthews, J., & Schetzina, J. F. (2002). UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes. Opto-Electronics Review, 10(4), 251–260.