David B. Terry

Works (3)

Updated: July 5th, 2023 15:59

2007 article

In Situ Auger Electron Spectroscopy Study of Atomic Layer Deposition:  Growth Initiation and Interface Formation Reactions during Ruthenium ALD on Si−H, SiO2, and HfO2 Surfaces

Park, K. J., Terry, D. B., Stewart, S. M., & Parsons, G. N. (2007, April 27). Langmuir, Vol. 23, pp. 6106–6112.

By: K. Park n, D. Terry n, S. Stewart n & G. Parsons n 

Contributors: K. Park n, D. Terry n, S. Stewart n & G. Parsons n 

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Catalytic Processes in Materials Science
TL;DR: Ruthenium ALD is studied here using ruthenocene and oxygen as reactants, and growth initiation and nucleation are characterized on several different growth surfaces, including SiO 2, HfO2, and hydrogen terminated silicon, using on-line Auger electron spectroscopy and ex-situ X-ray photoelectron spectroscopic. (via Semantic Scholar)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2006 article

Charge generation during oxidation of thin Hf metal films on silicon

Gougousi, T., Terry, D. B., & Parsons, G. N. (2006, March 16). Thin Solid Films, Vol. 513, pp. 201–205.

By: T. Gougousi n, D. Terry n & G. Parsons n 

Contributors: T. Gougousi n, D. Terry n & G. Parsons n 

author keywords: hafmium oxide; charge defects; dielectrics; interfaces; oxidation
topics (OpenAlex): Semiconductor materials and devices; Semiconductor materials and interfaces; Copper Interconnects and Reliability
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2003 article

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

Gougousi, T., Kelly, M. J., Terry, D. B., & Parsons, G. N. (2003, February 1). Journal of Applied Physics, Vol. 93, pp. 1691–1696.

By: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n 

Contributors: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n 

topics (OpenAlex): Semiconductor materials and devices; Copper Interconnects and Reliability; Semiconductor materials and interfaces
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

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