Works (3)

Updated: July 5th, 2023 15:59

2007 journal article

In situ Auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces

LANGMUIR, 23(11), 6106–6112.

By: K. Park n, D. Terry n, S. Stewart n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: K. Park n, D. Terry n, S. Stewart n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Charge generation during oxidation of thin Hf metal films on silicon

THIN SOLID FILMS, 513(1-2), 201–205.

By: T. Gougousi n, D. Terry n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, D. Terry n & G. Parsons n

author keywords: hafmium oxide; charge defects; dielectrics; interfaces; oxidation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

JOURNAL OF APPLIED PHYSICS, 93(3), 1691–1696.

By: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

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