David B. Terry

Works (3)

Updated: July 5th, 2023 15:59

2007 journal article

In situ Auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces

LANGMUIR, 23(11), 6106–6112.

By: K. Park n, D. Terry n, S. Stewart n & G. Parsons n 

Contributors: K. Park n, D. Terry n, S. Stewart n & G. Parsons n 

TL;DR: Ruthenium ALD is studied here using ruthenocene and oxygen as reactants, and growth initiation and nucleation are characterized on several different growth surfaces, including SiO 2, HfO2, and hydrogen terminated silicon, using on-line Auger electron spectroscopy and ex-situ X-ray photoelectron spectroscopic. (via Semantic Scholar)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Charge generation during oxidation of thin Hf metal films on silicon

THIN SOLID FILMS, 513(1-2), 201–205.

By: T. Gougousi n, D. Terry n & G. Parsons n 

Contributors: T. Gougousi n, D. Terry n & G. Parsons n 

author keywords: hafmium oxide; charge defects; dielectrics; interfaces; oxidation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

JOURNAL OF APPLIED PHYSICS, 93(3), 1691–1696.

By: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n 

Contributors: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n 

Sources: Web Of Science, ORCID
Added: August 6, 2018

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