1999 journal article

An experimental analysis of the dual gate emitter switched thyristor (DG-EST)

SOLID-STATE ELECTRONICS, 43(10), 1901–1908.

By: S. Sawant n, S. Sridhar n & B. Baliga n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Current saturation mechanism and FBOSA of the SIMEST

SOLID-STATE ELECTRONICS, 41(4), 561–566.

By: S. Sridhar n & B. Baliga n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Output characteristics of the dual channel EST

SOLID-STATE ELECTRONICS, 41(8), 1133–1138.

By: S. Sridhar n & B. Baliga n

TL;DR: Analysis of the output characteristics of the Dual Channel EST (DC-EST) is provided for the first time and it is demonstrated by analytical modelling and with the aid of two dimensional numerical simulations that the output resistance is determined by the activation of the narrow base NPN transistor in the IGBT segment. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1997 journal article

SIMFCT: A MOS-gated FCT with high voltage-current saturation

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2017–2021.

By: S. Sridhar n & B. Baliga n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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