S. Sridhar

Works (4)

Updated: July 5th, 2023 16:04

1999 journal article

An experimental analysis of the dual gate emitter switched thyristor (DG-EST)

SOLID-STATE ELECTRONICS, 43(10), 1901–1908.

By: S. Sawant n, S. Sridhar n & B. Baliga n

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Silicon Carbide Semiconductor Technologies; Electrostatic Discharge in Electronics
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Source: Web Of Science
Added: August 6, 2018

1997 journal article

Current saturation mechanism and FBOSA of the SIMEST

SOLID-STATE ELECTRONICS, 41(4), 561–566.

By: S. Sridhar n & B. Baliga n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; HVDC Systems and Fault Protection; Advanced DC-DC Converters
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Source: Web Of Science
Added: August 6, 2018

1997 journal article

Output characteristics of the dual channel EST

SOLID-STATE ELECTRONICS, 41(8), 1133–1138.

By: S. Sridhar n & B. Baliga n

topics (OpenAlex): Electrostatic Discharge in Electronics; Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices
TL;DR: Analysis of the output characteristics of the Dual Channel EST (DC-EST) is provided for the first time and it is demonstrated by analytical modelling and with the aid of two dimensional numerical simulations that the output resistance is determined by the activation of the narrow base NPN transistor in the IGBT segment. (via Semantic Scholar)
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Source: Web Of Science
Added: August 6, 2018

1997 journal article

SIMFCT: A MOS-gated FCT with high voltage-current saturation

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2017–2021.

By: S. Sridhar n & B. Baliga n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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