Works (4)
Updated: July 5th, 2023 16:04
1999 journal article
An experimental analysis of the dual gate emitter switched thyristor (DG-EST)
SOLID-STATE ELECTRONICS, 43(10), 1901–1908.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Current saturation mechanism and FBOSA of the SIMEST
SOLID-STATE ELECTRONICS, 41(4), 561–566.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Output characteristics of the dual channel EST
SOLID-STATE ELECTRONICS, 41(8), 1133–1138.
TL;DR:
Analysis of the output characteristics of the Dual Channel EST (DC-EST) is provided for the first time and it is demonstrated by analytical modelling and with the aid of two dimensional numerical simulations that the output resistance is determined by the activation of the narrow base NPN transistor in the IGBT segment.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
SIMFCT: A MOS-gated FCT with high voltage-current saturation
IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2017–2021.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018
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