Easwar Srinivasan

Hydrogen abstraction kinetics and crystallization in low temperature plasma deposition of silicon

APPLIED PHYSICS LETTERS, 72(4), 456–458.

Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 pt.1), 1316–1320.

Self-aligned gate and source drain contacts in inverted-staggered a-Si : H thin-film transistors fabricated using selective area silicon PECVD

IEEE ELECTRON DEVICE LETTERS, 19(6), 180–182.

Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 15(1), 77–84.

Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and microcrystalline silicon

JOURNAL OF APPLIED PHYSICS, 81(6), 2847–2855.

Investigation of substrate dependent nucleation of plasma-deposited microcrystalline silicon on glass and silicon substrates using atomic force microscopy

JOURNAL OF APPLIED PHYSICS, 82(12), 6041–6046.