1998 journal article
Hydrogen abstraction kinetics and crystallization in low temperature plasma deposition of silicon
APPLIED PHYSICS LETTERS, 72(4), 456–458.
Contributors: G. Parsons n n &
1998 journal article
Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation
Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 16(3), 1316–1320.
Contributors: L. Smith n, W. Read n, C. Yang n, n, C. Courtney n, H. Lamb n, G. Parsons n
1998 journal article
Self-aligned gate and source drain contacts in inverted-staggered a-Si : H thin-film transistors fabricated using selective area silicon PECVD
IEEE ELECTRON DEVICE LETTERS, 19(6), 180–182.
Contributors: C. Yang n, W. Read n, C. Arthur n, n & G. Parsons n
1997 journal article
Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 15(1), 77–84.
Contributors: D. Lloyd n & G. Parsons n n,
1997 journal article
Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and microcrystalline silicon
JOURNAL OF APPLIED PHYSICS, 81(6), 2847–2855.
Contributors: G. Parsons n n &
1997 journal article
Investigation of substrate dependent nucleation of plasma-deposited microcrystalline silicon on glass and silicon substrates using atomic force microscopy
JOURNAL OF APPLIED PHYSICS, 82(12), 6041–6046.
Contributors: L. Smith n, n & G. Parsons n
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