Works (4)

Updated: July 5th, 2023 15:59

2004 journal article

Interface instabilities and electronic properties of ZrO2 on silicon (100)

JOURNAL OF APPLIED PHYSICS, 96(5), 2665–2673.

By: C. Fulton n, T. Cook n, G. Lucovsky n & R. Nemanich n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Band offset measurements of the Si3N4/GaN (0001) interface

JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.

By: T. Cook n, C. Fulton n, W. Mecouch n, R. Davis n, G. Lucovsky n & R. Nemanich n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018