2004 journal article
Interface instabilities and electronic properties of ZrO2 on silicon (100)
JOURNAL OF APPLIED PHYSICS, 96(5), 2665–2673.
By: C. Fulton n, T. Cook n, G. Lucovsky n & R. Nemanich n
2003 journal article
Band offset measurements of the GaN (0001)/HfO2 interface
Journal of Applied Physics, 94(11), 7155–7158.
By: T. Cook, C. Fulton, W. Mecouch, R. Davis, G. Lucovsky & R. Nemanich
Band offset measurements of the Si3N4/GaN (0001) interface
JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.
By: T. Cook n, C. Fulton n, W. Mecouch n, R. Davis n, G. Lucovsky n & R. Nemanich n
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.
By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n
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