Ted E. Cook

Works (4)

Updated: July 5th, 2023 15:59

2004 article

Interface instabilities and electronic properties of ZrO2 on silicon (100)

Fulton, C. C., Cook, T. E., Lucovsky, G., & Nemanich, R. J. (2004, September 1). Journal of Applied Physics.

By: C. Fulton n, T. Cook n, G. Lucovsky n & R. Nemanich n

topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Electronic and Structural Properties of Oxides
Source: Web Of Science
Added: August 6, 2018

2003 article

Band offset measurements of the GaN (0001)/HfO2 interface

Ted E. Cook; Robert Nemanich; Gerald Lucovsky; Robert F. Davis; Charles C. Fulton; William J. Mecouch

topics (OpenAlex):
Source: NC State University Libraries
Added: August 6, 2018

2003 article

Band offset measurements of the Si3N4/GaN (0001) interface

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003, September 15). Journal of Applied Physics.

By: T. Cook n, C. Fulton n, W. Mecouch n, R. Davis n, G. Lucovsky n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2003 article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003, March 27). Journal of Applied Physics.

By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

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