@article{fulton_cook_lucovsky_nemanich_2004, title={Interface instabilities and electronic properties of ZrO2 on silicon (100)}, volume={96}, DOI={10.1063/1.1776313}, number={5}, journal={Journal of Applied Physics}, author={Fulton, C. C. and Cook, T. E. and Lucovsky, G. and Nemanich, R. J.}, year={2004}, pages={2665–2673} }
 @article{cook_fulton_mecouch_davis_lucovsky_nemanich_2003, title={Band offset measurements of the GaN (0001)/HfO2 interface}, volume={94}, DOI={10.1063/1.1618374}, number={11}, journal={Journal of Applied Physics}, author={Cook, T. E. and Fulton, C. C. and Mecouch, W. J. and Davis, R. F. and Lucovsky, G. and Nemanich, R. J.}, year={2003}, pages={7155–7158} }
 @article{cook_fulton_mecouch_davis_lucovsky_nemanich_2003, title={Band offset measurements of the Si3N4/GaN (0001) interface}, volume={94}, DOI={10.1063/1.1601314}, number={6}, journal={Journal of Applied Physics}, author={Cook, T. E. and Fulton, C. C. and Mecouch, W. J. and Davis, R. F. and Lucovsky, G. and Nemanich, R. J.}, year={2003}, pages={3949–3954} }
 @article{cook_fulton_mecouch_tracy_davis_hurt_lucovsky_nemanich_2003, title={Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)}, volume={93}, DOI={10.1063/1.1559424}, number={7}, journal={Journal of Applied Physics}, author={Cook, T. E. and Fulton, C. C. and Mecouch, W. J. and Tracy, K. M. and Davis, R. F. and Hurt, E. H. and Lucovsky, G. and Nemanich, R. J.}, year={2003}, pages={3995–4004} }