William J. Mecouch

Works (9)

Updated: July 5th, 2023 15:59

2018 article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018, November 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 36.

By: P. Reddy n , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n ...

Contributors: P. Reddy n , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries, ORCID
Added: December 10, 2018

2008 article

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

Cai, D., Mecouch, W. J., Zheng, L. L., Zhang, H., & Sitar, Z. (2008, January 20). International Journal of Heat and Mass Transfer.

By: D. Cai *, W. Mecouch n, L. Zheng *, H. Zhang* & Z. Sitar n

author keywords: computer simulation; heat and mass transfer; chemical reaction; thermodynamics; kinetics; semiconductor; gallium nitride
topics (OpenAlex): GaN-based semiconductor devices and materials; nanoparticles nucleation surface interactions; Semiconductor Quantum Structures and Devices
Source: Web Of Science
Added: August 6, 2018

2004 journal article

In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

By: Z. Reitmeier, J. Park, W. Mecouch & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 article

Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001)

Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. (2004, December 2). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: W. Mecouch n, B. Wagner n, Z. Reitmeier n, R. Davis n, C. Pandarinath  n, B. Rodriguez n, R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

2003 article

Band offset measurements of the GaN (0001)/HfO2 interface

Ted E. Cook; Robert Nemanich; Gerald Lucovsky; Robert F. Davis; Charles C. Fulton; William J. Mecouch

topics (OpenAlex):
Source: NC State University Libraries
Added: August 6, 2018

2003 article

Band offset measurements of the Si3N4/GaN (0001) interface

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003, September 15). Journal of Applied Physics.

By: T. Cook n, C. Fulton n, W. Mecouch n, R. Davis n, G. Lucovsky n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2003 article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003, September 3). Journal of Crystal Growth.

By: T. Smith n, W. Mecouch n, P. Miraglia n, A. Roskowski n, P. Hartlieb n & R. Davis n

author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
topics (OpenAlex): ZnO doping and properties; Ga2O3 and related materials; GaN-based semiconductor devices and materials
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Source: Web Of Science
Added: August 6, 2018

2003 article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003, March 27). Journal of Applied Physics.

By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2003 article

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

Tracy, K. M., Mecouch, W. J., Davis, R. F., & Nemanich, R. J. (2003, August 21). Journal of Applied Physics.

By: K. Tracy n, W. Mecouch n, R. Davis n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Photocathodes and Microchannel Plates; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

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