2018 journal article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).
Contributors: P. Reddy n , S. Washiyama n, n, L. Hernandez-Balderrama n, F. Kaess n, M. Hayden Breckenridge n, B. Sarkar n, B. Haidet n
2008 journal article
Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 51(5-6), 1264–1280.
2004 journal article
In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.
2004 journal article
Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77.
2003 journal article
Band offset measurements of the GaN (0001)/HfO2 interface
Journal of Applied Physics, 94(11), 7155–7158.
2003 journal article
Band offset measurements of the Si3N4/GaN (0001) interface
JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.
2003 journal article
Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262.
2003 journal article
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.
2003 journal article
Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)
JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.
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