William J. Mecouch

Works (9)

Updated: July 5th, 2023 15:59

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy n , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge  n, B. Sarkar n, B. Haidet n ...

Contributors: P. Reddy n , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Hayden Breckenridge  n, B. Sarkar n, B. Haidet n ...

Sources: Web Of Science, NC State University Libraries, ORCID
Added: December 10, 2018

2008 journal article

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 51(5-6), 1264–1280.

By: D. Cai *, W. Mecouch n, L. Zheng *, H. Zhang* & Z. Sitar n

author keywords: computer simulation; heat and mass transfer; chemical reaction; thermodynamics; kinetics; semiconductor; gallium nitride
Source: Web Of Science
Added: August 6, 2018

2004 journal article

In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

By: Z. Reitmeier, J. Park, W. Mecouch & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77.

By: W. Mecouch n, B. Wagner n, Z. Reitmeier n, R. Davis n, C. Pandarinath  n, B. Rodriguez n, R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

By: T. Cook, C. Fulton, W. Mecouch, R. Davis, G. Lucovsky & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Band offset measurements of the Si3N4/GaN (0001) interface

JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.

By: T. Cook n, C. Fulton n, W. Mecouch n, R. Davis n, G. Lucovsky n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262.

By: T. Smith n, W. Mecouch n, P. Miraglia n, A. Roskowski n, P. Hartlieb n & R. Davis n

author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
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Source: Web Of Science
Added: August 6, 2018

2003 journal article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.

By: K. Tracy n, W. Mecouch n, R. Davis n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

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