William J. Mecouch

Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018). Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6). https://doi.org/10.1116/1.5050501

Cai, D., Mecouch, W. J., Zheng, L. L., Zhang, H., & Sitar, Z. (2008). Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth. INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 51(5-6), 1264–1280. https://doi.org/10.1016/j.ijheatmasstransfer.2007.12.004

Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. (2005). Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77. https://doi.org/10.1116/1.1830497

Reitmeier, Z. J., Park, J. S., Mecouch, W. J., & Davis, R. F. (2004). In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the GaN (0001)/HfO2 interface. Journal of Applied Physics, 94(11), 7155–7158. https://doi.org/10.1063/1.1618374

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the Si3N4/GaN (0001) interface. JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954. https://doi.org/10.1063/1.1601314

Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003). Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy. JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262. https://doi.org/10.1016/S0022-0248(03)01469-6

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004. https://doi.org/10.1063/1.1559424

Tracy, K. M., Mecouch, W. J., Davis, R. F., & Nemanich, R. J. (2003). Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172. https://doi.org/10.1063/1.1596369