Edward H. Hurt

Works (2)

Updated: July 5th, 2023 15:59

2003 article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003, September 15). Journal of Applied Physics.

By: K. Tracy n, P. Hartlieb n, S. Einfeldt n, R. Davis n, E. Hurt n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and interfaces
Source: Web Of Science
Added: August 6, 2018

2003 article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003, March 27). Journal of Applied Physics.

By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

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