2003 journal article
Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag
Journal of Applied Physics, 94(6), 3939–3948.
By: K. Tracy, P. Hartlieb, S. Einfeldt, R. Davis, E. Hurt & R. Nemanich
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
Journal of Applied Physics, 93(7), 3995–4004.
By: T. Cook, C. Fulton, W. Mecouch, K. Tracy, R. Davis, E. Hurt, G. Lucovsky, R. Nemanich
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