2004 article

Improved charge neutralization method for depth profiling of bulk insulators using O-2(+) primary beam on a magnetic sector SIMS instrument

Pivovarov, A. L., Stevie, F. A., & Griffis, D. P. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 786–790.

By: A. Pivovarov, F. Stevie & D. Griffis

author keywords: charge neutralization; electron gun; magnetic sector
Source: Web Of Science
Added: August 6, 2018

2004 article

O-2(+) versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices

Kachan, M., Hunter, J., Kouzminov, D., Pivovarov, A., Gu, J., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 684–687.

By: M. Kachan n, J. Hunter*, D. Kouzminov*, A. Pivovarov, J. Gu n, F. Stevie, D. Griffis

author keywords: Cs cluster ions; GaN; depth resolution
Source: Web Of Science
Added: August 6, 2018

2004 article

Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 350–354.

By: C. Gu, A. Pivovarov, R. Garcia, F. Stevie, D. Griffis, J. Moran, L. Kulig, J. Richards

Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 article

Site-specific SIMS backside analysis

Gu, C., Garcia, R., Pivovarov, A., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 663–667.

By: C. Gu, R. Garcia, A. Pivovarov, F. Stevie & D. Griffis

author keywords: SfMS; backside analysis; semiconductors; patterned wafers
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 article

Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument

Pivovarov, A., Gu, C., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 781–785.

By: A. Pivovarov, C. Gu n, F. Stevie & D. Griffis

author keywords: charge neutralization; electron gun; negative secondary ions; magnetic sector
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Optimization of secondary ion mass spectrometry detection limit for N in SiC

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(5), 1649–1654.

By: A. Pivovarov, F. Stevie, D. Griffis & G. Guryanov

Source: Web Of Science
Added: August 6, 2018