Nathan Gregory Stoddard

A new understanding of near-threshold damage for 200 keV irradiation in silicon

JOURNAL OF MATERIALS SCIENCE, 40(14), 3639–3650.

Ab initio identification of the nitrogen diffusion mechanism in silicon

Physical Review Letters, 95(2).

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

JOURNAL OF APPLIED PHYSICS, 97(8).

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136.