2005 journal article

A new understanding of near-threshold damage for 200 keV irradiation in silicon

Journal of Materials Science, 40(14), 3639–3650.

By: N. Stoddard, G. Duscher, W. Windl & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Ab initio identification of the nitrogen diffusion mechanism in silicon

Physical Review Letters, 95(2).

By: N. Stoddard, P. Pichler, G. Duscher & W. Windl

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

Journal of Applied Physics, 97(8).

By: N. Stoddard, G. Duscher, A. Karoui, F. Stevie & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

Electrochemical and Solid State Letters, 6(11), G134–136.

By: N. Stoddard, A. Karoui, G. Duscher, A. Kvit & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018