Works (4)

Updated: July 5th, 2023 15:58

2005 journal article

A new understanding of near-threshold damage for 200 keV irradiation in silicon

JOURNAL OF MATERIALS SCIENCE, 40(14), 3639–3650.

By: N. Stoddard n, G. Duscher n, W. Windl* & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Ab initio identification of the nitrogen diffusion mechanism in silicon

Physical Review Letters, 95(2).

By: N. Stoddard, P. Pichler, G. Duscher & W. Windl

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

JOURNAL OF APPLIED PHYSICS, 97(8).

By: N. Stoddard n, G. Duscher n, A. Karoui n, F. Stevie n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136.

By: N. Stoddard n, A. Karoui n, G. Duscher n, A. Kvit n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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