Nathan Gregory Stoddard

Works (4)

Updated: July 5th, 2023 15:58

2005 article

A new understanding of near-threshold damage for 200 keV irradiation in silicon

Stoddard, N., Duscher, G., Windl, W., & Rozgonyi, G. (2005, July 1). Journal of Materials Science.

By: N. Stoddard n, G. Duscher n, W. Windl * & G. Rozgonyi n

topics (OpenAlex): Semiconductor materials and devices; Silicon and Solar Cell Technologies; Semiconductor materials and interfaces
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7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Ab initio identification of the nitrogen diffusion mechanism in silicon

Physical Review Letters, 95(2).

By: N. Stoddard, P. Pichler, G. Duscher & W. Windl

Source: NC State University Libraries
Added: August 6, 2018

2005 article

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

Stoddard, N., Duscher, G., Karoui, A., Stevie, F., & Rozgonyi, G. (2005, April 6). Journal of Applied Physics.

By: N. Stoddard n, G. Duscher n, A. Karoui n, F. Stevie n & G. Rozgonyi n

topics (OpenAlex): Ion-surface interactions and analysis; Integrated Circuits and Semiconductor Failure Analysis; Silicon and Solar Cell Technologies
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Source: Web Of Science
Added: August 6, 2018

2003 article

In Situ Point Defect Generation and Agglomeration during Electron-Beam Irradiation of Nitrogen-Doped Czochralski Silicon

Stoddard, N., Karoui, A., Duscher, G., Kvit, A., & Rozgonyi, G. (2003, January 1). Electrochemical and Solid-State Letters.

By: N. Stoddard n, A. Karoui n, G. Duscher n, A. Kvit n & G. Rozgonyi n

topics (OpenAlex): Silicon and Solar Cell Technologies; Semiconductor materials and interfaces; Thin-Film Transistor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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