@article{stoddard_duscher_windl_rozgonyi_2005, title={A new understanding of near-threshold damage for 200 keV irradiation in silicon}, volume={40}, ISSN={["1573-4803"]}, DOI={10.1007/s10853-005-1059-z}, number={14}, journal={JOURNAL OF MATERIALS SCIENCE}, author={Stoddard, N and Duscher, G and Windl, W and Rozgonyi, G}, year={2005}, month={Jul}, pages={3639–3650} }
 @article{stoddard_pichler_duscher_windl_2005, title={Ab initio identification of the nitrogen diffusion mechanism in silicon}, volume={95}, number={2}, journal={Physical Review Letters}, author={Stoddard, N. and Pichler, P. and Duscher, G. and Windl, W.}, year={2005} }
 @article{stoddard_duscher_karoui_stevie_rozgonyi_2005, title={Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment}, volume={97}, ISSN={["1089-7550"]}, DOI={10.1063/1.1866480}, abstractNote={A sample of nitrogen-doped, single crystal Czochralski silicon was subjected to several different surface preparations. Secondary ion mass spectrometry depth profiling has shown that prolonged glancing-angle bombardment by 3–5kV Ar+ ions significantly increases the nitrogen concentration in the near surface by up to an order of magnitude over the bulk value. Concentrations are observed to be elevated over the bulk value to a depth up to 25μm. Nitrogen-implanted samples and samples with a 1nm surface nitride did not exhibit nitrogen segregation under the same conditions, but a sample with 100nm of surface nitride did exhibit ion bombardment induced drive-in. In nitride-free samples, the source of the nitrogen is indicated to be a nitrogen-rich layer in the first micron of material. The diffusion behavior of nitrogen in silicon is discussed and the Crowdion mechanism for diffusion is suggested as the enabling mechanism for the enhanced low temperature diffusion.}, number={8}, journal={JOURNAL OF APPLIED PHYSICS}, author={Stoddard, N and Duscher, G and Karoui, A and Stevie, F and Rozgonyi, G}, year={2005}, month={Apr} }
 @article{stoddard_karoui_duscher_kvit_rozgonyi_2003, title={In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon}, volume={6}, ISSN={["1944-8775"]}, DOI={10.1149/1.1614471}, abstractNote={Samples of Czochralski silicon were observed after irradiation by a convergent electron beam in a transmission electron microscope. In a nitrogen-doped sample, the 200 keV electrons induced a vacancy-rich region containing point-defect clusters, surrounded by a ring rich in self-interstitials. No comparable effect existed in nitrogen-free reference samples. It is proposed that Frenkel pairs, created by electron collisions, are separated and stabilized by nitrogen or related complexes. Some interstitials become free to diffuse while the nitrogen, vacancies and oxygen agglomerate. This study demonstrates that the initial formation of voids and precipitate nuclei from point defects can be observed at low temperatures. © 2003 The Electrochemical Society. All rights reserved.}, number={11}, journal={ELECTROCHEMICAL AND SOLID STATE LETTERS}, author={Stoddard, N and Karoui, A and Duscher, G and Kvit, A and Rozgonyi, G}, year={2003}, month={Nov}, pages={G134–G136} }