Works (7)

Updated: July 5th, 2023 16:04

1999 journal article

Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor

SOLID-STATE ELECTRONICS, 43(2), 395–402.

By: N. Thapar n & B. Baliga n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

An experimental evaluation of the on-state performance of trench IGBT designs

SOLID-STATE ELECTRONICS, 42(5), 771–776.

By: N. Thapar n & B. Baliga n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices

SOLID-STATE ELECTRONICS, 42(11), 1975–1979.

By: N. Thapar n & B. Baliga n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Influence of the collector resistance on the performance of accumulation channel driven bipolar transistor

SOLID-STATE ELECTRONICS, 42(9), 1697–1703.

By: N. Thapar n & B. Baliga n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 patent

Static-induction transistors having heterojunction gates and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

By: N. Thapar, P. Shenoy & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Depleted base transistor with high forward voltage blocking capability

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & N. Thapar

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The accumulation channel driven bipolar transistor (ACBT)

IEEE ELECTRON DEVICE LETTERS, 18(5), 178–180.

By: N. Thapar n & B. Baliga n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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