Works (7)
Updated: July 5th, 2023 16:04
1999 journal article
Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor
SOLID-STATE ELECTRONICS, 43(2), 395–402.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
An experimental evaluation of the on-state performance of trench IGBT designs
SOLID-STATE ELECTRONICS, 42(5), 771–776.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices
SOLID-STATE ELECTRONICS, 42(11), 1975–1979.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Influence of the collector resistance on the performance of accumulation channel driven bipolar transistor
SOLID-STATE ELECTRONICS, 42(9), 1697–1703.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1998 patent
Static-induction transistors having heterojunction gates and methods of forming same
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
1997 patent
Depleted base transistor with high forward voltage blocking capability
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
1997 journal article
The accumulation channel driven bipolar transistor (ACBT)
IEEE ELECTRON DEVICE LETTERS, 18(5), 178–180.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018
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